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SDR1190 PDF даташит

Спецификация SDR1190 изготовлена ​​​​«Solid States Devices» и имеет функцию, называемую «(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER».

Детали детали

Номер произв SDR1190
Описание (SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER
Производители Solid States Devices
логотип Solid States Devices логотип 

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SDR1190 Даташит, Описание, Даташиты
Solid State Devices, Inc.
147w0w1 wF.irDeastaoSneheBeltv4dU.*coLma Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR11 __ __
││
││
││
││
││
Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Pin Configuration __ = Normal (Cathode to Stud)
(See Table 1)
R = Reverse (Anode to Stud)
Family/Voltage
83 = 50V
84 = 100V
85 = 150V
86 = 200V
87 = 300V
88 = 400V
89 = 500V
90 = 600V
SDR1183
Thru
SDR1190
35 Amp
50-600 Volt
5 μsec
STANDARD RECOVERY
RECTIFIER
Features:
Low Reverse Leakage Current
Single Chip Construction
PIV to 600V
Hermetically Sealed
Low Thermal Resistance
Higher Voltage Devices Up to 1400V Available*
Fast and Ultra Fast Recovery Versions Available*
For Reverse Polarity Add Suffix “R”
Replacement for 1N1183, 1N1184, 1N1185, 1N1186,
1N1187, 1N1188, 1N1189, and 1N1190
TX, TXV, and S-Level Screening Available 2/
*Contact Factory
Maximum Ratings
Peak Repetitive Reverse and DC Blocking
Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
SDR1183
SDR1184
SDR1185
SDR1186
SDR1187
SDR1188
SDR1189
SDR1190
Symbol
VRRM
VRWM
VR
Io
IFSM
TOP & TSTG
RθJC
Value
50
100
150
200
300
400
500
600
35
500
-65 to +150
1.0
Units
Volts
Amps
Amps
ºC
ºC/W
DO-5:
Notes:
1/ For ordering information, price, operating curves, and availability- contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00005B
DOC









No Preview Available !

SDR1190 Даташит, Описание, Даташиты
Solid State Devices, Inc.
1w4w70w1.DFairteasStohneeetB4Ulv.dco*mLa Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
SDR1183
Thru
SDR1190
Electrical Characteristics
Instantaneous Forward Voltage Drop
(IF = 35 Adc, TA = 25 ºC, 300μs pulse)
Instantaneous Forward Voltage Drop
(IF = 35 Adc, TA = -55 ºC, 300μs pulse)
Reverse Leakage Current
(Rated VR, TA = 25 ºC, 300μs pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 100 ºC, 300μs pulse minimum)
Reverse Recovery Time
(IF = 500 mA, IR = 1 Amp, IRR = 250 mA, TA = 25 ºC)
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
Symbol
VF
VF
IR
IR
tRR
CJ
Max
1.4
1.6
20
2
5
250
Code
__
R
Table 1- PIN ASSIGNMENT
Configuration
Terminal
Stud
Normal
Anode
Cathode
Reverse
Cathode
Anode
DO-5 Outline (Normal Pin Configuration Shown):
Units
VDC
VDC
μA
mA
μsec
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00005B
DOC










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Номер в каталогеОписаниеПроизводители
SDR1190(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIERSolid States Devices
Solid States Devices

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