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6073A PDF даташит

Спецификация 6073A изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую « 2N6073A».

Детали детали

Номер произв 6073A
Описание 2N6073A
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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6073A Даташит, Описание, Даташиты
2N6071A/B Series
Preferred Device
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Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
http://onsemi.com
TRIACS
4.0 A RMS, 200 − 600 V
MT2
MT1
G
3
21
REAR VIEW
SHOW TAB
TO−225
CASE 077
STYLE 5
MARKING DIAGRAM
1. Cathode
2. Anode
3. Gate
YWW
2N
607xyG
x = 1, 3, 5
y = A, B
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
1
Publication Order Number:
2N6071/D









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6073A Даташит, Описание, Даташиты
2N6071A/B Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
ww*wP.eDaaktaRSehpeeettit4ivUe.cOofmf-State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
V
*On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz
*Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
ITSM
I2t
4.0
30
3.7
A
A
A2s
*Peak Gate Power (Pulse Width 1.0 ms, TC = 85°C)
*Average Gate Power (t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage (Pulse Width 1.0 ms, TC = 85°C)
*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque (6-32 Screw) (Note 2)
PGM
PG(AV)
VGM
TJ
Tstg
10
0.5
5.0
−40 to +110
−40 to +150
8.0
W
W
V
°C
°C
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
*Indicates JEDEC Registered Data.
Symbol
RqJC
RqJA
TL
Max
3.5
75
260
Unit
°C/W
°C/W
°C
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6073A Даташит, Описание, Даташиты
2N6071A/B Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ Max Unit
wOwFwF.DCaHtaASRhAeeCtT4EUR.cIoSmTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak)
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = −40°C)
Gate Non−Trigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = 110°C)
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc)
TJ = −40°C
TJ = 25°C
Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc)
IDRM,
IRRM
VTM
VGT
VGD
IH
tgt
− − 10 mA
− − 2 mA
−−2V
V
− 1.4 2.5
V
0.2 −
mA
− − 30
− − 15
− 1.5 − ms
QUADRANT
(Maximum Value)
Type
IGT @ TJ
I II III IV
mA mA mA mA
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
2N6071A
2N6073A
2N6075A
+25°C
−40°C
5 5 5 10
20 20 20 30
2N6071B
2N6073B
2N6075B
+25°C
−40°C
3335
15 15 15 20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
*Indicates JEDEC Registered Data.
dv/dt(c)
− 5 − V/ms
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
0V
MC7400
LOAD
4 510 2N6071A
−VEE
7
VEE = 5.0 V
W
115 VAC
60 Hz
+
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
http://onsemi.com
3










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