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PDF C5103 Data sheet ( Hoja de datos )
| Número de pieza | C5103 | |
| Descripción | NPN Transistor - 2SC5103 | |
| Fabricantes | ROHM Electronics | |
| Logotipo |  |
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Transistors
2SC5103
High speed switching transistor (60V, 5A)
2SC5103
!Features
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
−55~+150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
5.5 1.5
0.9
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5103
CPT3
PQ
TL
2500
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
∗ Measured using pulse current.
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
100
60
5
−
−
−
−
−
−
82
−
−
−
−
−
Typ.
−
−
−
−
−
0.15
−
−
−
−
120
80
−
−
0.1
Max.
−
−
−
10
10
0.3
0.5
1.2
1.5
270
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 100V
VEB = 5V
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
IC/IB = 3A/0.15A
IC/IB = 4A/0.2A
VCE/IC = 2V/1A
VCB = 10V , IE = 0.5A , f = 30MHz
VCE = 10V , IE = 0A , f = 1MHz
IC = 3A , RL = 10Ω
IB1 = −IB2 = 0.15A
VCC 30V
∗
∗
∗
∗
∗
1 page | ||
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| PDF Descargar | [ Datasheet C5103.PDF ] | |
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