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PDF HMC619LP5E Data sheet ( Hoja de datos )
| Número de pieza | HMC619LP5E | |
| Descripción | Wideband Power Amp | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.1007
9
www.datashTeeytp4ui.ccoaml Applications
The HMC619LP5(E) wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Features
P1dB Output Power: +27 dBm
Gain: 11 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm2
General Description
The HMC619LP5(E) is a GaAs MMIC PHEMT
Distributed Power Amplifier die which operates
between DC and 10 GHz. The amplifier provides
11 dB of gain, +37 dBm output IP3 and +27 dBm
of output power at 1 dB gain compression while
requiring 300mA from a +12V supply. Gain flatness
is excellent at ±0.5 dB from DC - 10 GHz making the
HMC619LP5(E) ideal for EW, ECM, Radar and test
equipment applications. The HMC615LP5(E) amplifier
I/Os are internally matched to 50 ohms.
9 - 318
Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 2.0
Gain
11 12
Gain Flatness
±0.5
Gain Variation Over Temperature
0.016
Input Return Loss
11
Output Return Loss
12 16
Output Power for 1 dB Compression (P1dB)
28
Saturated Output Power (Psat)
29
Output Third Order Intercept (IP3)
41
Noise Figure
5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
300
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Min.
10.5
11
26
Typ.
2.0 - 8.0
11
±0.25
0.02
12.5
16
27
28
37
5
Max.
300
Min.
9.5
7
24
Typ.
8.0 - 10.0
10.5
±0.5
0.03
17
12
25
25.5
32
7
Max.
300
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
9
www.datashOeeut4utl.cionme Drawing
v01.1007
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC619LP5
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC619LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H619
XXXX
H619
XXXX
9 - 322
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC619LP5E.PDF ] | |
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