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PDF HMC715LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC715LP3 | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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www.datashTeeyt4pui.ccoaml Applications
The HMC715LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC715LP3 / 715LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Features
Noise Figure: 0.9 dB
Gain: 19 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC715LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 2.1 and 2.9 GHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
19 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC715LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 296
Electrical Specifications
TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1]
Parameter
Vdd = +3V
Vdd = +5V
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
2.1 - 2.9
2.3 - 2.7
2.1 - 2.9
2.3 - 2.7
MHz
Gain
14.5 18
15 18
15.5 19
16.5 19
dB
Gain Variation Over Temperature
0.01
0.01
0.01
0.01
dB/ °C
Noise Figure
0.9 1.2
0.9 1.2
0.9 1.2
0.9 1.2
dB
Input Return Loss
11.5 11 11.5 11 dB
Output Return Loss
14
13.5
12.5
12 dB
Output Power for 1 dB
Compression (P1dB)
10.5 14.5
12.5 15
15 19
16.5 19.5
dBm
Saturated Output Power (Psat)
16
16.5
20
20.5
dBm
Output Third Order Intercept (IP3)
28
28.5
33
33.5
dBm
Supply Current (Idd)
47 65
47 65
95 126
95 126 mA
[1] Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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www.datashOeeut4tup.cuomt IP3 vs. Rbias @ 2300 MHz
35
32
29
26
23
20
100
Vdd=3V
Vdd=5V
1000
10000
Rbias (Ohms)
100000
Output IP3 vs. Rbias @ 2700 MHz
38
35 Vdd=3V
Vdd=5V
32
29
26
23
100
1000
10000
Rbias (Ohms)
100000
HMC715LP3 / 715LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Gain, Noise Figure & Rbias @ 2300 MHz
22 1.1
20 1.05
18 1
16
Vdd=3V
0.95
Vdd=5V
14 0.9
12 0.85
10
100
1000
10000
Rbias (Ohms)
0.8
100000
Gain, Noise Figure & Rbias @ 2700 MHz
20 1.4
18 1.3
16 1.2
14 1.1
12 1
10
8
100
Vdd=3V
Vdd=5V
1000
10000
Rbias (Ohms)
0.9
0.8
100000
5 - 300
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC715LP3.PDF ] | |
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