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Número de pieza | HMC716LP3 | |
Descripción | Low Noise Amplifier SMT | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
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www.datashTeeyt4pui.ccoaml Applications
The HMC716LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Features
Noise Figure: 1 dB
Gain: 18 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC716LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC716LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications
TA = +25° C, Rbias = 820 Ohms for Vdd = 5V, Rbias = 47k Ohms for Vdd = 3V [1]
Parameter
Vdd = +3V
Min. Typ. Max.
Vdd = +5V
Min. Typ.
Frequency Range
3.1 - 3.9
3.1 - 3.9
Gain
13 17
15.5
18
Gain Variation Over Temperature
0.01
0.01
Noise Figure
1 1.3
1
Input Return Loss
25 30
Output Return Loss
13 16
Output Power for 1 dB Compression (P1dB)
12 15
16 19
Saturated Output Power (Psat)
16.5
20.5
Output Third Order Intercept (IP3)
26 33
Supply Current (Idd)
41 55
65
[1] Rbias resistor sets current, see application circuit herein
Max.
1.3
90
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
5 - 306
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page v00.0808
5
www.datashOeeut4tup.cuomt IP3 vs. Rbias @ 3300 MHz
40
36
Vdd=3V
Vdd=5V
32
28
24
20
100
1000
10000
Rbias (Ohms)
100000
Output IP3 vs. Rbias @ 3800 MHz
40
36 Vdd=3V
Vdd=5V
32
28
24
20
100
1000
10000
Rbias (Ohms)
100000
HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Gain, Noise Figure & Rbias @ 3300 MHz
22 1.3
20
Vdd=3V
Vdd=5V
1.25
18 1.2
16 1.15
14 1.1
12 1.05
10
100
1000
10000
Rbias (Ohms)
1
100000
Gain, Noise Figure & Rbias @ 3800 MHz
20 1.25
18
Vdd=3V
Vdd=5V
1.2
16 1.15
14 1.1
12 1.05
10 1
8
100
1000
10000
Rbias (Ohms)
0.95
100000
5 - 310
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HMC716LP3.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC716LP3 | Low Noise Amplifier SMT | Hittite Microwave Corporation |
HMC716LP3E | Low Noise Amplifier SMT | Hittite Microwave Corporation |
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