HMC718LP4 PDF даташит
Спецификация HMC718LP4 изготовлена «Hittite Microwave Corporation» и имеет функцию, называемую «Low Noise Amplifier SMT». |
|
Детали детали
Номер произв | HMC718LP4 |
Описание | Low Noise Amplifier SMT |
Производители | Hittite Microwave Corporation |
логотип |
10 Pages
No Preview Available ! |
v01.1008
5
www.datashTeeyt4pui.ccoaml Applications
The HMC718LP4(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Access Points
• Test Equipment
Functional Diagram
HMC718LP4 / 718LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Features
Noise Figure: 0.9 dB
Gain: 32 dB
Output IP3: +40 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC718LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 600 and 1400 MHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
32 dB gain and +40 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC718LP4(E) shares the same package and
pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA.
The HMC718LP4(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 334
Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
26 30.5
25 27.5
0.01
0.01
0.95
0.75
15 20
13 10
13 15.5
13 15.7
19
35
187 200
19
34.5
187
200
Vdd = +5V
Units
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
GHz
27 32
25 29
dB
0.01
0.01
dB/ °C
0.95
0.8 dB
15.5
23 dB
15.5
13 dB
19 21.5
19 21.5
dBm
23.5
40.5
254
281
23.3
dBm
40 dBm
254 281 mA
* Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
No Preview Available ! |
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
www.datashBeert4oua.cdomband Gain & Return Loss [1] [2]
40
S21
30
20
10 Vdd=5V
Vdd=3V
0
-10
-20
-30 S22
S11
-40
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FREQUENCY (GHz)
2
Gain vs. Temperature [1]
40
35
30
+25C
+85C
-40C
25
20
0.5
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
5
Gain vs. Temperature [2]
40
35
30
+25C
+85C
-40C
25
20
0.5
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
Input Return Loss vs. Temperature [1]
0
-10
-20
-30
-40
-50
0.5
+25C
+85C
-40C
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
Output Return Loss vs. Temperature [1]
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
0.5
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
Reverse Isolation vs. Temperature [1]
0
-10
+25C
-20 +85C
-40C
-30
-40
-50
-60
0.5
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 335
No Preview Available ! |
v01.1008
5
www.datashNeeot4ius.ceomFigure vs. Temperature [1] [2]
1.6
1.4 Vdd=5V
Vdd=3V
+85C
1.2
1
0.8
0.6
0.4
0.2
0.5
+25C
-40C
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
HMC718LP4 / 718LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
P1dB vs. Temperature [1] [2]
26
24 Vdd=5V
22
20
+25C
+85C
18 -40C
16
14
12
0.5
Vdd=3V
0.7 0.9 1.1
FREQUENCY (GHz)
1.3
1.5
Psat vs. Temperature [1] [2]
26
24
22
Vdd=5V
20
18
Vdd=3V
16
14
12
0.5
0.7 0.9 1.1
FREQUENCY (GHz)
+25C
+85C
-40C
1.3
1.5
Output IP3 vs. Temperature [1] [2]
50
+25C
Vdd=5V
45 +85C
-40C
40
35
30
25
0.5
Vdd=3V
0.7 0.9 1.1 1.3
FREQUENCY (GHz)
1.5
Output IP3 and Idd vs.
Supply Voltage @ 700 MHz [3]
45
40 IP3
35
30
25
20
15
2.7 3.1 3.5 3.9 4.3 4.7
VOLTAGE SUPPLY (V)
300
250
200
150
100
50
Idd1
Idd2
0
5.1 5.5
Output IP3 and Idd vs.
Supply Voltage @ 1300 MHz [3]
45
300
40 IP3
250
35 200
30 150
25 100
20
50
Idd1
Idd2
15 0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
VOLTAGE SUPPLY (V)
5 - 336
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Скачать PDF:
[ HMC718LP4.PDF Даташит ]
Номер в каталоге | Описание | Производители |
HMC718LP4 | Low Noise Amplifier SMT | Hittite Microwave Corporation |
HMC718LP4E | Low Noise Amplifier SMT | Hittite Microwave Corporation |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |