HMC738LP4 PDF даташит
Спецификация HMC738LP4 изготовлена «Hittite Microwave Corporation» и имеет функцию, называемую «GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO». |
|
Детали детали
Номер произв | HMC738LP4 |
Описание | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO |
Производители | Hittite Microwave Corporation |
логотип |
6 Pages
No Preview Available ! |
HMC738LP4 / 738LP4E
v02.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
Typical Applications
The HMC738LP4(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios / LMDS
• VSAT
Features
Pout: +9 dBm
Phase Noise: -95 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC738LP4(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO. The
HMC738LP4(E) integrates a resonator, negative
resistance device, varactor diode and divide-by-16
prescaler. The VCO’s phase noise performance is
excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output is
+9 dBm typical from a 5V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4x4 mm surface mount package
8-1
Electrical Specifications, TA = +25° C, Vcc (RF), Vcc (DIG) = +5V
Frequency Range
Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RF OUT
RF OUT/2
RF OUT/16
Min.
3
-3.5
-7
Vtune
Icc (RF), Icc (DIG)
1
160
Typ.
20.9 - 23.9
-95
200
3
1/2 -23
3/2 -40
22
-90
3.5
Max.
15
+3.5
-1
13
220
10
Units
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
No Preview Available ! |
HMC738LP4 / 738LP4E
v02.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
Frequency vs. Tuning Voltage, T= 25°C
26
25
24
23
22
21
20 Vcc= 4.75V
Vcc= 5.0V
19 Vcc= 5.25V
18
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc= +5V
1600
1400
1200
+25C
+85C
-40C
1000
800
600
400
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Frequency vs. Tuning Voltage, Vcc= +5V
26
25
24
23
22
21
20 +25 C
+85 C
19 -40 C
18
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Output Power
vs. Tuning Voltage, Vcc= +5V
14
12
10
8
6
+25 C
+85 C
4 -40 C
2
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise vs. Tuning Voltage
-55
-65
-75
-85
10kHz offset
100kHz offset
-95
-105
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise @ Vtune= 5V
-30
-50
-70
+25C
+85C
-40C
-90
-110
-130
-150
103
104 105 106
OFFSET FREQUENCY (Hz)
107
8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2
No Preview Available ! |
HMC738LP4 / 738LP4E
v02.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
RFOUT/2 Frequency
vs. Tuning Voltage, Vcc= +5V
13
12.5
12
11.5
11
10.5
10 +25 C
+85 C
9.5 -40 C
9
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-16 Frequency
vs. Tuning Voltage, Vcc= +5V
1.6
8 1.5
1.4
1.3
1.2
+25 C
+85 C
-40 C
1.1
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
RFOUT/2 Output Power
Power vs. Tuning Voltage, Vcc= +5V
3
2
1
0
-1
-2
+25 C
+85 C
-40 C
-3
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-16 Output Power
vs. Tuning Voltage, Vcc= +5V
-2
-2.5
-3
+25 C
+85 C
-40 C
-3.5
-4
-4.5
-5
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Absolute Maximum Ratings
Vcc (RF), Vcc (DIG)
Vtune
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 23 mW/° above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
0 to +15V
135° C
1.2 W
43 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
4.75
175
5.0 200
5.25
220
Note: VCO will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Скачать PDF:
[ HMC738LP4.PDF Даташит ]
Номер в каталоге | Описание | Производители |
HMC738LP4 | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
HMC738LP4E | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |