HMC739LP4 PDF даташит
Спецификация HMC739LP4 изготовлена «Hittite Microwave Corporation» и имеет функцию, называемую «GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO». |
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Детали детали
Номер произв | HMC739LP4 |
Описание | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO |
Производители | Hittite Microwave Corporation |
логотип |
6 Pages
No Preview Available ! |
HMC739LP4 / 739LP4E
v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 23.8 - 26.8 GHz
Typical Applications
The HMC739LP4(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios / LMDS
• VSAT
Features
Pout: +8 dBm
Phase Noise: -93 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC739LP4(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC739LP4(E) integrates a resonator, negative
resistance device, varactor diode and divide-by-16
prescaler. The VCO’s phase noise performance is
excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output is
+8 dBm typical from a 5V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4x4 mm surface mount package
Electrical Specifications, TA = +25° C, Vcc(RF), Vcc(DIG) = +5V
Frequency Range
Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RF OUT
RF OUT/2
RF OUT/16
Min.
3
-3
-7
Vtune
Icc (RF), Icc (DIG)
1
160
1/2
3/2
Typ.
23.8 - 26.8
-93
200
3
-20
-30
30
-65
4
Max.
14
5
-1
13
220
10
Units
GHz
dBm
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
No Preview Available ! |
HMC739LP4 / 739LP4E
v03.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 23.8 - 26.8 GHz
Frequency vs. Tuning Voltage, T= 25°C
29
28
27
26
25
24
23 Vcc= 4.75V
Vcc= 5.0V
22 Vcc= 5.25V
21
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc= +5V
1800
1600
1400
1200
+25C
+85C
-40C
1000
800
600
400
200
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Frequency vs. Tuning Voltage, Vcc= +5V
29
28
27
26
25
24
23 +25 C
+85 C
22 -40 C
21
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Output Power
vs. Tuning Voltage, Vcc= +5V
13
12
11
10
9
8
7 +25 C
+85 C
6 -40 C
5
4
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise vs. Tuning Voltage
-50
-60
-70
-80 10kHz offset
100kHz offset
-90
-100
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise @ Vtune= 5V
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
103
+25C
+85C
-40C
104 105 106
OFFSET FREQUENCY (Hz)
107
8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2
No Preview Available ! |
HMC739LP4 / 739LP4E
v03.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 23.8 - 26.8 GHz
RFOUT/2 Frequency
vs. Tuning Voltage, Vcc= +5V
14.5
14
13.5
13
12.5
12
11.5
11
+25 C
+85 C
-40 C
10.5
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
RFOUT/2 Output Power
vs. Tuning Voltage, Vcc= +5V
4
3
2
1
0
-1
+25 C
+85 C
-40 C
-2
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-16 Frequency
vs. Tuning Voltage, Vcc = +5V
1.8
8 1.7
1.6
1.5
1.4
+25 C
+85 C
-40 C
1.3
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-16 Output Power
vs. Tuning Voltage, Vcc = +5V
-2
-2.5
+25 C
+85 C
-3 -40 C
-3.5
-4
-4.5
-5
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Absolute Maximum Ratings
Vcc (RF), Vcc (DIG)
Vtune
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 23.3 mW/° above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
0 to +15V
135° C
1.2 W
43 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vcc
Vcc(RF), Vcc DIG) (V)
Icc (mA)
4.75
172
5.0 192
5.25
212
Note: VCO will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
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Номер в каталоге | Описание | Производители |
HMC739LP4 | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
HMC739LP4E | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
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