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PDF HMC743LP6C Data sheet ( Hoja de datos )

Número de pieza HMC743LP6C
Descripción 12-Bit Digital Variable Gain Amplifier SMT
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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HMC743LP6C / 743LP6CE
v01.0409
0.5 dB LSB GaAs MMIC 12-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, DC - 4 GHz
www.datashTeeytp4ui.ccoaml Applications
The HMC743LP6C(E) is ideal for:
• Cellular/3G Infrastructure
• WiBro, WiMAX & LTE/4G
• Microwave Radio & VSAT
• Test Equipment and Sensors
• IF & RF Applications
Functional Diagram
13
Features
-45 to +18 dB Gain Control in 0.5 dB Steps
Power-up State Selection
High Output IP3: +33 dBm
TTL/CMOS Compatible Serial Control
±0.25 dB Typical Gain Step Error
Single +5V Supply
40 Lead 6x6mm SMT Package: 36mm2
General Description
The HMC743LP6C(E) is a digitally controlled variable
gain amplifier which operates from DC to 4 GHz,
can be programmed to provide 63 dB of gain control
in 0.5 dB steps and delivers output IP3 of up to
+33 dBm. The gain control interface accepts a three
wire serial input word and allows independent or
simultaneous control of two 6-bit digital attenuators.
The HMC743LP6C(E) also features a user selectable
power up state and a serial output for cascading
other serially controlled Hittite products. The
HMC743LP6C(E) is housed in an RoHS compliant
6x6 mm QFN leadless package, and requires minimal
external components.
13 - 120
Electrical Specifications, TA = +25° C, 50 Ohm System Vdd = +5V, Vcc = +5V
Parameter
Min.
Typ.
Max.
Min.
Typ. Max.
Frequency Range
70 - 1000
700 - 4000
Gain (Maximum Gain State)
15.5
18.5
6 13
Gain Control Range
63 63
Input Return Loss
18 19
Output Return Loss
15 17
Gain Accuracy: (Referenced to Maximum Gain State)
All Gain States
70 - 350 MHz: ± (0.3 + 3.5%)
350 - 750 MHz: ± (0.3 + 6.0%)
750 - 1000 MHz: ± (0.3 + 4.0%)
0.7 - 1.7 GHz: ± (0.3 + 4.5%)
1.7 - 3.2 GHz: ± (0.3 + 4.0%)
3.2 - 4.0 GHz: ± (0.3 + 5.0%)
Output Power for 1 dB Compression
18 17
Output Third Order Intercept Point
(Two-Tone Output Power= 8 dBm Each Tone)
33
28
Noise Figure
67
Switching Characteristics
tRISE, tFall (10 / 90% RF)
tON, tOFF (Latch Enable to 10 / 90% RF)
100
160
100
160
Supply Current (Idd)
22
Supply Current (Icc)
82 102
82 102
Units
MHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
ns
ns
mA
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

1 page




HMC743LP6C pdf
v01.0409
HMC743LP6C / 743LP6CE
0.5 dB LSB GaAs MMIC 12-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, DC - 4 GHz
Output Attenuator Bit Error vs.
www.datashFeerte4uq.cuoemncy (Major States)
70 to 1000 MHz Tuning
Output Attenuator Bit Error vs.
Attenuation State (Major Frequencies)
23
31.5dB
0.5, 0.7GHz
1 16dB 8dB
2
01
13
-1
-2
0
0.2 0.4 0.6
FREQUENCY (GHz)
0.8
1
0
0.1GHz
0.3, 0.9GHz
-1
0
8 16 24 32 40 48 56 64
RELATIVE GAIN STATE (dB)
Output Attenuator Relative Phase vs.
Frequency (Major States)
20
10
31.5dB
0
8, 16dB
-10 0.5, 1, 2, 4dB
-20
0
0.2 0.4 0.6
FREQUENCY (GHz)
0.8
1
13 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

5 Page





HMC743LP6C arduino
v01.0409
HMC743LP6C / 743LP6CE
0.5 dB LSB GaAs MMIC 12-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, DC - 4 GHz
www.datashTeertu4ut.hcomTable (for each attenuator)
Control Voltage Input
Attenuation
D5 D4 D3 D2 D1 D0
High High High High High High
0 dB
High High High High High Low
-0.5 dB
High High High High Low High
-1 dB
High High High Low High High
-2 dB
High High Low High High High
-4 dB
High Low High High High High
-8 dB
Low High High High High High
-16 dB
Low Low Low Low Low Low
-31.5 dB
Any combination of the above states will provide an attenuation
approximately equal to the sum of the bits selected.
13
Bias Voltage
Vdd (V)
+5.0
Vcc (V)
+5.0
Idd (Typ.) (mA)
2
Icc (mA)
82
Outline Drawing
Absolute Maximum Ratings
RF Input Power [1]
Digital Inputs (CLK, LEA, LEB,
SERIN, PUP1, PUP2 & B0)
Bias Voltage (Vdd)
Collector Bias Voltage (Vcc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.5 mW/°C above 85 °C) [1]
Thermal Resistance
Storage Temperature
Operating Temperature
[1] At max gain settling
11.5 dBm (T = +85 °C)
-1.5V to (Vdd +1.5V) Vdc
5.6 Vdc
5.5 Vdc
150 °C
1.09 W
69 °C/W
-65 to +150 °C
-40 to +85 °C
TTL/CMOS Control Voltage
State
Low
High
Vdd= +5V
0 to 0.8V
2.0V to Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
13 - 130
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

11 Page







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