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NJG1602HE3 PDF даташит

Спецификация NJG1602HE3 изготовлена ​​​​«NJR Corporation» и имеет функцию, называемую «DPDT Switch GAAS Mmic».

Детали детали

Номер произв NJG1602HE3
Описание DPDT Switch GAAS Mmic
Производители NJR Corporation
логотип NJR Corporation логотип 

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NJG1602HE3 Даташит, Описание, Даташиты
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NJG1602HE3
DPDT SWITCH GaAs MMIC
Q GENERAL DESCRIPTION
NJG1602HE3 is a GaAs high power DPDT switch MMIC
for antenna switch of tri- and dual-mode cellular phone
application such as CDMA, GPS and PCS.
This switch features low loss, high isolation at high power.
This device includes logic decoder function, and can be
operated by 1 bit control signal for path switching.
The ultra small & ultra thin USB12 package is adopted.
Q PACKAGE OUTLINE
Q FEATURES
O Low voltage operation
O Pin at 0.2dBcompression point
O Low insertion loss
O High isolation
O Low current consumption
O Ultra small & ultra thin package
+2.5V min.
36dBm typ. @f=0.9GHz, VCTL=2.7V
0.3dB typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
0.55dB typ. @f=1.9GHz, PIN=25dBm, VCTL=2.7V
21dB typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
15dB typ. @f=1.9GHz, PIN=25dBm, VCTL=2.7V
17uA typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
USB12-E3 (Package size: 2.35x2.35x0.75mm)
Q PIN CONFIGURATION
USB12Type
(Top View)
12 11
10
19
28
37
456
Q TRUTH TABLE
“H”=CTL(H), “L”=CTL(L)
CTL H L
P1-P4, P2-P3 ON
P1-P2, P3-P4 OFF
OFF
ON
Pin connection
1. VDD
2. P1
3. GND
4. P2
5. GND
6. P3
7. GND
8. P4
9. GND
10.GND
11.GND
12.CTL
NOTE: Please note that any information on this catalog will be subject to change.
Ver.2003-05-20
-1-









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NJG1602HE3 Даташит, Описание, Даташиты
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Q ABSOLUTE MAXIMUM RATINGS
PARAMETER
RF Input Power
Supply Voltage
Control Voltage
SYMBOL
CONDITIONS
PIN VDD =2.7V, CTL=0V/2.7V
VDD VDD terminal
VCTL CTL terminal
(Ta=+25°C, Zs=Zl=50)
CONDITIONS UNITS
37 dBm
7.5 V
7.5 V
Power Dissipation
Operating Temp.
Storage Temp.
PD
Topr
Tstg
250
-40~+85
-55~+150
mW
°C
°C
Q ELECTRICAL CHARACTERISTICS
(General conditions: Ta=+25°C, Zs=Zl=50, VDD=2.7V, CTL(L)=0V, CTL(H)=2.7V )
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating Current
Supply Voltage
Control Voltage (LOW)
IDD
VDD
CTL(L)
PIN=25dBm
-
70 100
uA
- 2.7 5.5
V
0 - 0.8 V
Control Voltage (HIGH)
Control Current
Insertion Loss 1
CTL(H)
ICTL
LOSS1
f=0.9GHz, PIN=25dBm
f=0.9GHz, PIN=25dBm
2.5 2.7 VDD
- 17 30
- 0.3 0.4
V
uA
dB
Insertion Loss 2
LOSS2 f=1.9GHz, PIN=25dBm
- 0.55 0.7 dB
Isolation 1
ISL1 f=0.9GHz, PIN=25dBm
20 21
-
dB
Isolation 2
Pin at 0.2dB
Compression Point
ISL2
P-0.2dB
f=1.9GHz, PIN=25dBm
f=1.9GHz
14 15
33 36
- dB
- dBm
2nd Harmonics 1
2fo(1) f=0.9GHz, PIN=25dBm
-
-80 -65
dBc
2nd Harmonics 2
2fo(2) f=1.9GHz, PIN=25dBm
-
-75 -70
dBc
3rd Harmonics 1
3fo(1) f=0.9GHz, PIN=25dBm
-
-75 -60
dBc
3rd Harmonics 2
Input 3 rd order
intercept Point 1
Input 3 rd order
intercept Point 2
3fo(2)
IIP3(1)
IIP3(2)
f=1.9GHz, PIN=25dBm
f=900+901MHz,
Pin=25dBm *1
f=1900+1901MHz,
Pin=25dBm *1
-
-70 -60
dBc
56 62 - dBm
54 60 - dBm
VSWR
Switching time
VSWRi on-state ports, f=0.9GHz
TSW f=0.1~2.5GHz
-
-
1.1 1.4
1.2 -
us
*1: The input IP3 is defined as following equation.
IIP3=(3 x Pout - IM3) / 2 + LOSS
-2-
Ver.2003-05-20









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NJG1602HE3 Даташит, Описание, Даташиты
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Q TERMINAL INFORMATION
NJG1602HE3
No. SYMBOL
DESCRIPTION
Positive voltage supply terminal. The positive voltage (+2.5~+5.5V) have to be
1 VDD supplied. Please connect a bypass capacitor with GND terminal for excellent
RF performance.
RF port. This port is connected with P4 port by controlling 12pin-CTL(H)
(+2.5~+VDD).
2 P1 This port is connected with P2 port by controlling 12pin- CTL(L) (0~+0.8V) .
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
3
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
RF port. This port is connected with P3 port by controlling 12pin- CTL(L)
(0.2~+0.8V).
4 P2 This port is connected with P3 port by controlling 12pin- CTL(H)(+2.5~+VDD).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
5
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
RF port. This port is connected with P2 port by controlling 12pin- CTL(H)
(+2.5~+VDD).
6 P3 This port is connected with P4 port by controlling 12pin-VCTL(L) (0~+0.8V).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
7
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
RF port. This port is connected with P1 port by controlling 12pin- CTL(H)
(+2.5~+VDD).
8 P4 This port is connected with P3 port by controlling 12pin- CTL(L) (0~+0.8V).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
9
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
10
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
11
GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
12
CTL
Control signal input terminal.
This terminal is set to High-Level (+2.5V~VDD) or Low-Level (0~+0.8V).
Ver.2003-05-20
-3-










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Номер в каталогеОписаниеПроизводители
NJG1602HE3DPDT Switch GAAS MmicNJR Corporation
NJR Corporation

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