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WSE128K16-xxx PDF даташит

Спецификация WSE128K16-xxx изготовлена ​​​​«White Electronic Designs Corporation» и имеет функцию, называемую «128Kx16 SRAM/EEPROM MODULE».

Детали детали

Номер произв WSE128K16-xxx
Описание 128Kx16 SRAM/EEPROM MODULE
Производители White Electronic Designs Corporation
логотип White Electronic Designs Corporation логотип 

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WSE128K16-xxx Даташит, Описание, Даташиты
White Electronic Designs
www.DataSheet4U.com
WSE128K16-XXX
PRELIMINARY*
128Kx16 SRAM/EEPROM MODULE
FEATURES
Access Times of 35ns (SRAM) and 150ns (EEPROM)
Access Times of 45ns (SRAM) and 120ns (EEPROM)
Access Times of 70ns (SRAM) and 300ns (EEPROM)
Packaging
• 66 pin, PGA Type, 1.075" square HIP, Hermetic
Ceramic HIP (H1) (Package 400)
Commercial, Industrial and Military Temperature
Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
EEPROM MEMORY FEATURES
• 68 lead, Hermetic CQFP (G2T), 22mm (0.880")
square (Package 509). Designed to fit JEDEC 68
lead 0.990" CQFJ footprint (FIGURE 2)
128Kx16 SRAM
128Kx16 EEPROM
Organized as 128Kx16 of SRAM and 128Kx16 of
EEPROM Memory with separate Data Buses
Write Endurance 10,000 Cycles
Data Retention at 25°C, 10 Years
Low Power CMOS Operation
Automatic Page Write Operation
Page Write Cycle Time 10ms Max.
Data Polling for End of Write Detection
Both blocks of memory are User Configurable as
256Kx8
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
Low Power CMOS
* This product is under development, is not qualified or characterized and is subject to
change without notice.
FIGURE 1 – WSE128K16-XH1X PIN
CONFIGURATION
Top View
1 12 23
34 45 56
SD8 SWE2# SD15
ED8 VCC ED15
SD9 SCS2# SD14
ED9 ECS2#
ED14
SD10
GND
SD13
ED10 EWE2#
ED13
A13
SD11
SD12
A6 ED11 ED12
A14 A10 OE#
A7 A3 A0
A15 A11 NC
NC A4 A1
PIN DESCRIPTION
ED0-15
SD0-15
A0-16
SWE#1-2
SCS#1-2
OE#
VCC
GND
NC
EWE#1-2
ECS#1-2
EEPROM Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
EEPROM Write Enable
EEPROM Chip Select
A16 A12 SWE#1
NC VCC SD7
SD0 SCS1# SD6
SD1 NC
SD5
A8 A5
A9 EWE1#
ED0 ECS1#
ED1 GND
A2
ED7
ED6
ED5
BLOCK DIAGRAM
OE#
A0-16
SWE1# SCS1#
SWE2# SCS2#
EWE1# ECS1#
EWE2# ECS2#
128K x 8
SRAM
128K x 8
SRAM
128K x 8
EEPROM
128K x 8
EEPROM
SD2 SD3 SD4
11 22
33
ED2 ED3 ED5
44 55 66
8
SD0-7
8
SD8-15
8
ED0-7
8
ED8-15
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com









No Preview Available !

WSE128K16-xxx Даташит, Описание, Даташиты
White Electronic Designs
www.DataSheet4U.com
WSE128K16-XXX
PRELIMINARY
FIGURE 2 WSE128K16-XG2TX PIN CONFIGURATION
Top View
PIN DESCRIPTION
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
SD0
SD1
SD2
SD3
SD4
SD5
SD6
SD7
GND
SD8
SD9
SD10
SD11
SD12
SD13
SD14
SD15
10 60
11 59
12 58
13 57
14 56
15 55
16 54
17 53
18 52
19 51
20 50
21 49
22 48
23 47
24 46
25 45
26 44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
ED0
ED1
ED2
ED3
ED4
ED5
ED6
ED7
GND
ED8
ED9
ED10
ED11
ED12
ED13
ED14
ED15
ED0-15
SD0-15
A0-16
SWE#1-2
SCS#1-2
OE#
VCC
GND
NC
EWE#1-2
ECS#1-2
EEPROM Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
EEPROM Write Enable
EEPROM Chip Select
BLOCK DIAGRAM
OE#
A0-16
SWE1# SCS1#
SWE2# SCS2#
EWE1# ECS1#
EWE2# ECS2#
128K x 8
SRAM
128K x 8
SRAM
128K x 8
EEPROM
128K x 8
EEPROM
8
SD0-7
8
SD8-15
8
ED0-7
8
ED8-15
0.940"
The WEDC 68 lead G2T CQFP fills the same fit and
function as the JEDEC 68 lead CQFJ or 68 PLCC. But
the G2T has the TCE and lead inspection advantage
of the CQFP form.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com









No Preview Available !

WSE128K16-xxx Даташит, Описание, Даташиты
White Electronic Designs
www.DataSheet4U.com
WSE128K16-XXX
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Min Max
Operating Temperature
TA -55 +125
Storage Temperature
TSTG -65 +150
Signal Voltage Relative to GND VG
-0.5 VCC+0.5
Junction Temperature
TJ
150
Supply Voltage
VCC -0.5 7.0
Unit
°C
°C
V
°C
V
CAPACITANCE
TA = +25°C
Parameter
OE# capacitance
WE#1-4 capacitance
HIP (PGA)
CQFP G2T
CS#1-4 capacitance
Data I/O capacitance
Address input capacitance
Symbol Conditions
COE VIN = 0 V, f = 1.0 MHz
CWE VIN = 0 V, f = 1.0 MHz
CCS VIN = 0 V, f = 1.0 MHz
CI/O VI/O = 0 V, f = 1.0 MHz
CAD VIN = 0 V, f = 1.0 MHz
Max Unit
50 pF
20
pF
20
20 pF
20 pF
50 pF
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
VCC
VIH
VIL
TA
Min Max Unit
4.5 5.5
V
2.0 VCC + 0.3
V
-0.3 +0.8
V
-55 +125 °C
EEPROM TRUTH TABLE
CS# OE# WE#
HXX
L LH
LHL
XHX
XXH
XLX
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
SRAM TRUTH TABLE
SCS# OE# SWE#
HXX
L LH
LHH
LXL
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 16 Mode
Standby Current
SRAM Output Low Voltage
(35 to 45ns)
(70ns)
SRAM Output High Voltage
(35 to 45ns)
(70ns)
EEPROM Operating Supply Current x 16 Mode
EEPROM Output Low Voltage
EEPROM Output High Voltage
Symbol
ILI
ILO
ICCx16
ISB
VOL
VOL
VOH
VOH
ICC1
VOL
VOH1
Conditions
VCC = 5.5, VIN = GND to VCC
SCS# = VIH, OE# = VIH, VOUT = GND to VCC
SCS# = VIL, OE# = ECS# = VIH, f = 5MHz, VCC = 5.5
ECS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 8.0mA, VCC = 4.5
IOL = 2.1mA, VCC = 4.5
IOH = -4.0mA, VCC = 4.5
IOH = -1mA, VCC = 4.5
ECS# = VIL, OE# = SCS# = VIH
IOL = 2.1 mA, VCC = 4.5V
IOH = 400 µA, VCC = 4.5V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
Min Max Unit
10 µA
10 µA
360 mA
31.2 mA
0.4 V
0.4 V
2.4 V
2.4 V
155 mA
0.45 V
2.4 V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com










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Номер в каталогеОписаниеПроизводители
WSE128K16-xxx128Kx16 SRAM/EEPROM MODULEWhite Electronic Designs Corporation
White Electronic Designs Corporation

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