NSI45025ZT1G PDF даташит
Спецификация NSI45025ZT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Constant Current Regulator & LED Driver». |
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Детали детали
Номер произв | NSI45025ZT1G |
Описание | Constant Current Regulator & LED Driver |
Производители | ON Semiconductor |
логотип |
7 Pages
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NSI45025ZT1G
Constant Current Regulator
& LED Driver
45 V, 25 mA + 15%, 1.4 W Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self-Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 25% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard, and
UL94−V0 certified.
Features
• Robust Power Package: 1.4 Watts
• Wide Operating Voltage Range
• Immediate Turn-On
• Voltage Surge Suppressing − Protecting LEDs
• AEC-Q101 Qualified and PPAP Capable, UL94−V0 Certified
• SBT (Self−Biased Transistor) Technology
• Negative Temperature Coefficient
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
• Switch Contact Wetting
• Application Note AND8391/D − Power Dissipation Considerations
• Application Note AND8349/D − Automotive CHMSL
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Anode−Cathode Voltage
Vak Max
45
Reverse Voltage
Operating and Storage Junction
Temperature Range
VR
TJ, Tstg
500
−55 to +150
Unit
V
mV
°C
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Ireg(SS) = 25 mA
@ Vak = 7.5 V
Anode 1
Cathode 2/4
SOT−223
CASE 318E
STYLE 2
MARKING DIAGRAM
C
AYW
AAEG
G
1
A C NC
A = Assembly Location
Y = Year
W = Work Week
AAE = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSI45025ZT1G SOT−223 1000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 2
1
Publication Order Number:
NSI45025Z/D
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NSI45025ZT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Ireg(SS)
21.25
25
28.75
mA
Voverhead
1.8
V
Ireg(P)
22
26
30 mA
C 2.6 pF
Capacitance @ Vak = 0 V (Note 4)
C 6.9 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD 954 mW
7.6 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
131
40.8
1074
8.6
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
116
39.9
1150
9.2
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
109
42
1300
10.4
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
96
39.4
1214
9.7
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
103
40.2
1389
11.1
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
90 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
RψJL4
37.7 °C/W
Junction and Storage Temperature Range
5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
TJ, Tstg
−55 to +150
°C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
http://onsemi.com
2
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NSI45025ZT1G
TYPICAL PERFORMANCE CURVES
Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air
60
50
40
30
20
10
VR
0
−10
−20
−10
0
10 20 30 40 50 60
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 1. General Performance Curve for CCR
28
27
26 TA = 25°C
25
24
23
22
3.0
Non−Repetitive Pulse Test
4.0 5.0 6.0 7.0 8.0 9.0
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
10
30
TA = −40°C
[ −0.070 mA/°C
25
TA = 25°C
typ @ Vak = 7.5 V
[ −0.058 mA/°C
20
TA = 85°C
typ @ Vak = 7.5 V
[ −0.051 mA/°C
15
TA = 125°C
typ @ Vak = 7.5 V
10
5
0 DC Test Steady State, Still Air
0 1 2 3 4 5 6 7 8 9 10
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
29
Vak @ 7.5 V
28 TA = 25°C
27
26
25
24
23
22
21
22 23 24 25 26 27 28 29 30
Ireg(P), PULSE CURRENT (mA)
Figure 4. Steady State Current vs. Pulse
Current Testing
27
Vak @ 7.5 V
TA = 25°C
26
25
24
0 5 10 15 20 25 30 35
TIME (s)
Figure 5. Current Regulation vs. Time
2200
2000
1800
500 mm2/2 oz
300 mm2/2 oz
1600
1400
100 mm2/2 oz
1200
1000 500 mm2/1 oz
800
600
400
−40
300 mm2/1 oz
100 mm2/1 oz
−20 0
20 40
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C
http://onsemi.com
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