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PDF HMC667LP2E Data sheet ( Hoja de datos )
| Número de pieza | HMC667LP2E | |
| Descripción | SMT Low Noise Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0508
5
Typical Applications
The HMC667LP2(E) is ideal for:
• WiMAX, WiBro & Fixed Wireless
• SDARS & WLAN Receivers
• Infrastructure & Repeaters
• Access Points
• Telematics & DMB
Functional Diagram
HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Features
Low Noise Figure: 0.75 dB
High Gain: 19 dB
High Output IP3: +29.5 dBm
Single Supply: +3V to +5V
6 Lead 2x2mm DFN Package: 4 mm2
General Description
The HMC667LP2(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for WiMAX, WLAN and
fixed wireless receivers operating between 2300
and 2700 MHz. This self-biased LNA has been
optimized to provide 0.75 dB noise figure, 19 dB
gain and +29.5 dBm output IP3 from a single supply
of +5V. Input and output return losses are excellent
and the LNA requires minimal external matching and
bias decoupling components. The HMC667LP2(E)
can also operate from a +3V supply for lower power
applications.
Electrical Specifications, TA = +25° C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Min.
14
9.5
Vdd = +3 Vdc
Typ.
2300 - 2700
17.5
0.01
0.9
10
15
11.5
12.5
22
24
Max.
1.2
32
Min.
16
13.5
Vdd = +5 Vdc
Typ.
2300 - 2700
19
0.01
0.75
12
14
16.5
17
29.5
59
Max.
1.1
80
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
5 - 266
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.0508
5
Gain & Return Loss w/ SDARS Tune [1]
25
20
15
10
5
0
-5
-10
-15
-20
-25
2.25
S11
S22
S21
2.3 2.35 2.4
FREQUENCY (GHz)
2.45
HMC667LP2 / 667LP2E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.7 GHz
Noise Figure vs. Vdd w/ SDARS Tune [2]
1.6
1.4
1.2 Vdd=5V
Vdd=3V
1
0.8
0.6
0.4
0.2
2.25
2.3 2.35 2.4
FREQUENCY (GHz)
2.45
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.88 mW/°C above 85 °C)
Thermal Resistance
(Channel to Ground Paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+10 dBm
150 °C
0.38 W
170 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 270
[1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC667LP2E.PDF ] | |
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