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PDF HMC694 Data sheet ( Hoja de datos )
| Número de pieza | HMC694 | |
| Descripción | Analog Variable Gain Amplifier Chip | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v03.1108
Typical Applications
The HMC694 is ideal for:
• Point-to-Point Radio
• Point-to-Multi-Point Radio
• EW & ECM
• X-Band Radar
• Test Equipment
8 Functional Diagram
HMC694
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
Features
Wide Gain Control Range: 23 dB
Single Control Voltage
Output IP3 @ Max Gain: +30 dBm
Output P1dB: +22 dBm
No External Matching
Die Size: 2.26 x 0.97 x 0.1 mm
General Description
The HMC694 is a GaAs MMIC PHEMT analog vari-
able gain amplifier die which operates between 6 and
17 GHz. Ideal for microwave radio applications, the
amplifier provides up to 24 dB of gain, output P1dB
of up to 22 dBm, and up to 30 dBm of Output IP3 at
maximum gain, while requiring only 170 mA from a
+5V supply. A gate bias (Vctrl) is provided to allow
variable gain control up to 23 dB. Gain flatness is
excellent from 6 to 17 GHz, making the HMC694 ideal
for EW, ECM and radar applications. The HMC694
can easily be integrated into Multi-Chip-Modules
(MCMs) due to its small size and no external match-
ing. All data is taken with the chip in a 50 Ohm test
fixture connected via 0.025 mm (1 mil) diameter wire
bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd1, 2, 3= 5V, Vctrl= -2V, Idd= 170 mA*
Parameter
Min. Typ. Max. Min.
Frequency Range
6 - 10
Gain
19 24
17
Gain Flatness
±1
Gain Variation Over Temperature
0.03
Gain Control Range
23
Noise Figure
5.5 7.5
Input Return Loss
15
Output Return Loss
10
Output Power for 1 dB Compression (P1dB)
19
21
21
Saturated Output Power (Psat)
22
Output Third Order Intercept (IP3)
30
Total Supply Current (Idd)
170
*Set Vctrl = -2V and then adjust Vgg1, 2 between -2V to 0V (typ. -0.8V) to achieve Idd = 170mA typical.
Typ.
10 - 17
21
±1.5
0.03
20
5
12
8
22
23
30
170
Max.
6.5
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v03.1108
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3)
Gate Bias Voltage (Vgg1, 2)
Gain Control Voltage (Vctrl)
RF Input Power
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 10.2 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5V
-3 to 0V
-3 to 0V
+5 dBm
175 °C
0.92 W
97.6 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC694
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
Typical Supply Current vs. Vdd
Vdd1,2,3 (V)
+5.0
Vgg1,2 (V)
0V to -2V
Idd Total (mA)
170
Igg Total (mA)
<3 μA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8-6
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC694.PDF ] | |
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