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PDF HMC694LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC694LP4E | |
| Descripción | Analog Variable Gain Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v02.1108
Typical Applications
The HMC694LP4(E) is ideal for:
• Point-to-Point Radio
• Point-to-Multi-Point Radio
• EW & ECM
• X-Band Radar
• Test Equipment
8 Functional Diagram
HMC694LP4 / 694LP4E
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
Features
Wide Gain Control Range: 23 dB
Single Control Voltage
Output IP3 @ Max Gain: +30 dBm
Output P1dB: +22 dBm
No External Matching
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC694LP4E is a GaAs MMIC PHEMT analog
variable gain amplifier which operates between 6 and
17 GHz. Ideal for microwave radio applications, the
amplifier provides up to 22 dB of gain, output P1 dB
of up to +22 dBm, and up to +30 dBm of output IP3
at maximum gain, while requiring only 175 mA from
a +5V supply. A gate bias pin (Vctrl) is provided to
allow variable gain control up to 23 dB. Gain flatness
is excellent making the HMC694LP4E ideal for EW,
ECM and radar applications. The HMC694LP4E is
housed in a RoHS compliant 4x4 mm QFN leadless
package and is compatible with high volume surface
mount manufacturing.
8 - 80
Electrical Specifications, TA = +25°C, Vdd1, 2, 3= 5V, Vctrl= -2V, Idd= 170 mA*
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
6 - 10
Gain
19 22
14
Gain Flatness
±1
Gain Variation Over Temperature
0.015
Gain Control Range
23
Noise Figure
6 7.5
Input Return Loss
15
Output Return Loss
10
Output Power for 1 dB Compression (P1dB)
19
21
21
Saturated Output Power (Psat)
22
Output Third Order Intercept (IP3)
30
Total Supply Current (Idd)
175
*Set Vctrl = -2V and then adjust Vgg1, 2 between -2V to 0V (typ. -0.8V) to achieve Idd = 170mA typical.
Typ.
10 - 17
18
±1.5
0.015
20
6
8
8
22
23
30
175
Max.
6.5
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v02.1108
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3)
Gate Bias Voltage (Vgg1, 2)
Gain Control Voltage (Vctrl)
RF Power Input
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 10.2 mW/°C above 85 °C) [1]
Thermal Resistance
(Channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
-3 to 0V
-3 to 0V
+5 dBm
175 °C
0.92 W
97.6 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC694LP4 / 694LP4E
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
Bias Voltage
Vdd1,2,3 (V)
+5.0
Vgg1,2 (V)
0V to -2V
Idd Total (mA)
170
Igg Total (mA)
<3 μA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8 - 84
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number
HMC694LP4
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC694LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H694
XXXX
H694
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC694LP4E.PDF ] | |
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