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PDF C2258 Data sheet ( Hoja de datos )
| Número de pieza | C2258 | |
| Descripción | NPN Transistor - 2SC2258 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SC2258www.DataSheet4U.com
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
250
250
7
100
150
1.2 *1
4 *2
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) *1: Without heat sink
*2 :With a 100 × 100 × 2 mm Al heat sink
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
VEBO
VBE
ICER
IE = 0.1 mA, IC = 0
VCE = 20 V, IC = 40 mA
VCE = 250 V, RBE = 100 kΩ
7V
1.2 V
100 µA
Forward current transfer ratio
hFE1 VCE = 20 V, IC = 40 mA
40
hFE2 VCE = 50 V, IC = 5 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 50 V, IE = 0, f = 1 MHz
3.0 4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00098BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C2258.PDF ] | |
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