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ZXMC10A816N8 PDF даташит

Спецификация ZXMC10A816N8 изготовлена ​​​​«Diodes» и имеет функцию, называемую «Dual MOSFET».

Детали детали

Номер произв ZXMC10A816N8
Описание Dual MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMC10A816N8 Даташит, Описание, Даташиты
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A Product Line of
Diodes Incorporated
ZXMC10A816N8
100V SO8 Complementary Dual enhancement mode
MOSFET
Summary
Device V(BR)DSS (V) QG (nC)
Q1 100
9.2
RDS(on) ()
0.230 @ VGS= 10V
0.300 @ VGS= 4.5V
ID (A)
TA= 25°C
2.1
1.9
0.235 @ VGS= -10V
-2.2
Q2 -100 16.5
0.320 @ VGS= -4.5V
-1.9
Description
This new generation complementary dual MOSFET
features low on-resistance achievable with low gate drive.
Features
100 V Complementary in SOIC package
Low on-resistance
Fast switching speed
Low voltage (VGS = 4.5 V) gate drive
Applications
DC motor control
Backlighting
Class D Audio Output Stages (<100W)
Ordering information
Device
Reel size
(inches)
ZXMC10A816N8TC
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
ZXMC
10A816
D1 D2
G1 G2
S1
Q1 N-Channel
S2
Q2 P-Channel
S1 D1
G1 D1
S2 D2
G2 D2
Top view
Issue 1.3 - March 2009
© Diodes Incorporated 2009
1
www.diodes.com









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ZXMC10A816N8 Даташит, Описание, Даташиты
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ZXMC10A816N8
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
(b)(d)
Continuous Drain current @ VGS= 10V; TA=25°C
(b)(d)
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C (a)(d)
@ VGS= 10V; TA=25°C (a)(e)
(f)(d)
@ VGS= 10V; TL=25°C
(c)(d)
Pulsed Drain current @ VGS= 10V; TA=25°C
Continuous Source current (Body diode) at TA =25°C (b)(d)
(c)(d)
Pulsed Source current (Body diode) at TA =25°C
Power dissipation at TA =25°C (a)(d)
Linear derating factor
(a)(e)
Power dissipation at TA =25°C
Linear derating factor
(b)(d)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C (f)(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
N-
channel
Q1
100
±20
P-
channel
Q2
-100
±20
Unit
V
V
ID 2.1 -2.2 A
1.7 -1.8
1.7 -1.7
2.0 -2.0
2.3 -2.4
IDM 9.4 -10.5 A
IS
ISM
PD
PD
PD
PD
Tj, Tstg
3.0 -3.1
9.4 -10.5
1.3
10.0
1.8
14.2
2.1
16.7
2.4 2.6
18.9 20.4
-55 to 150
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
(a)(d)
Junction to ambient
(a)(e)
Junction to ambient
Junction to ambient (b)(d)
Junction to lead (f)(d)
Symbol
RθJA
RθJA
RθJA
RθJL
Value
100
70
60
53 49
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions; the device is measured when operating in a steady-state condition.
(b) Same as note (a), except the device is measured at t 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition.
Issue 1.3 - March 2009
© Diodes Incorporated 2009
2
www.diodes.com









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ZXMC10A816N8 Даташит, Описание, Даташиты
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Thermal characteristics
ZXMC10A816N8
10
R
DS(ON)
Limited
1
DC
100m
1s
100ms
10m
Note (a)(d)
10ms
1ms
Single Pulse, T =25°C
amb
100us
0.1 1 10
V Drain-Source Voltage (V)
DS
N-channel Safe Operating Area
100
10 R
DS(ON)
Limited
1
DC
100m
1s
100ms
Note (a)(d)
10ms
1ms
10m Single Pulse, T =25°C
amb
100us
0.1 1 10
-V Drain-Source Voltage (V)
DS
P-channel Safe Operating Area
100
100
80
60 D=0.5
40
D=0.2
20
Single Pulse
D=0.05
0
100µ 1m 10m 100m 1
D=0.1
10 100
Pulse Width (s)
1k
Transient Thermal Impedance
2.0
1.5 Two active die
One active die
1.0
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
Single Pulse
100 T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
Issue 1.3 - March 2009
© Diodes Incorporated 2009
3
www.diodes.com










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