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PDF HMC817LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC817LP4E | |
| Descripción | Dual Channel Low Noise Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.1108
8
Typical Applications
The HMC817LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Multi-Channel Applications
• Access Points
HMC817LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Features
Noise Figure: 0.5 dB
Gain: 16 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
Functional Diagram
General Description
The HMC817LP4E is a GaAs PHEMT Dual Chan-
nel Low Noise Amplifier that is ideal for Cellular/3G
and LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC817LP4E shares
the same package and pinout with the HMC816LP4E
and HMC818LP4E LNAs. The HMC817LP4E can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
8 - 370
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
Parameter
Vdd = +3 V
Min. Typ. Max. Min. Typ. Max.
Frequency Range
698 - 960
550 - 1200
Gain
13 16
11 15
Gain Variation Over Temperature
0.003
0.003
Noise Figure
0.5 0.8
0.5 1.1
Input Return Loss
28 22
Output Return Loss
12 14
Output Power for 1 dB
Compression (P1dB)
14 16
12.5 16.5
Saturated Output Power (Psat)
17
17.5
Output Third Order Intercept (IP3)
31
30
Supply Current (Idd)
24 34 44 24 34 44
* Rbias resistor sets current, see application circuit herein
Vdd = +5 V
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
13.5 16
11.5 16
0.005
0.005
0.55 0.85
0.6 1.1
22 17
12 15
Units
MHz
dB
dB/ °C
dB
dB
dB
18.5 20.5
16.5 21
dBm
21 21.5 dBm
37 37 dBm
65 95 124 65 95 124 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.1108
8
Cross Channel Isolation [1]
0
HMC817LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Magnitude Balance [1]
1
-10 RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
-20
0.5
0
-30 -0.5
-40
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
-1
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Phase Balance [1]
2
1
0
-1
-2
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
Vdd (V)
Idd (mA)
2.7 24
3.0 34
3.3 44
4.5 82
5.0 95
5.5 105
Note: Amplifier will operate over full voltage ranges shown above.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 16.67 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6V
+10 dBm
150 °C
1.08 W
60 °C/W
-65 to +150 °C
-40 to +85 °C
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V)
Min
Rbias Ω
Idd (mA)
Max Recommended
Open
3V 10k circuit 10k
34
820
5V
Open
0 circuit
2k
10k
58
78
95
With Vdd = 3V Rbias <10k is not recommended and may result in
LNA becoming conditionally unstable.
8 - 374
[1] Vdd = 5V [2] Vdd = 3V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC817LP4E.PDF ] | |
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