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PDF HMC-ALH382 Data sheet ( Hoja de datos )
| Número de pieza | HMC-ALH382 | |
| Descripción | GaAs HEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0108
1
Typical Applications
This HMC-ALH382 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Military & Space
Functional Diagram
HMC-ALH382
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Features
Noise Figure: 3.8 dB
P1dB: +12 dBm
Gain: 21 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.55 x 0.73 x 0.1 mm
General Description
The HMC-ALH382 is a high dynamic range, four
stage GaAs HEMT MMIC Low Noise Amplifier
(LNA) which operates between 57 and 65 GHz. The
HMC-ALH382 features 21 dB of small signal gain,
4 dB of noise figure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 64 mA*
Parameter
Min. Typ.
Frequency Range
57 - 65
Gain
19 21
Noise Figure
4
Input Return Loss
12
Output Return Loss
10
Output Power for 1 dB Compression (P1dB)
12
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
64
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Iddtotal = 64 mA
Max.
5.5
100
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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1
Pad Descriptions
Pad Number
Function
1 RFIN
2 RFOUT
3 Vdd
v01.0108
HMC-ALH382
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
4 Vgg ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
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| PDF Descargar | [ Datasheet HMC-ALH382.PDF ] | |
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