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PDF HMC-AUH256 Data sheet ( Hoja de datos )
| Número de pieza | HMC-AUH256 | |
| Descripción | GaAs HEMT MMIC DRIVER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0208
Typical Applications
2 This HMC-AUH256 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• SATCOM
HMC-AUH256
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
Features
Gain: 21 dB
P1dB Output Power: +20 dBm
Wideband Performance: 17.5 to 40 GHz
Supply Voltage: +5V @ 295 mA
Small Chip Size: 2.1 x 0.92 x 0.1 mm
Functional Diagram
General Description
The HMC-AUH256 is a GaAs MMIC HEMT four stage
Driver Amplifier which covers the frequency range
of 17.5 to 40 GHz. The chip can easily be integrated
into Multi-Chip-Modules (MCMs) due to its small (1.93
mm2) size. The HMC-AUH256 offers 21 dB of gain
and +20 dBm output power at 1 dB compression from
a bias supply of +5V @ 295 mA. The HMC-AUH256
may also be used as a frequency doubler. Detail bias
condition to achieve doubler operation.
Electrical Specifications ,[1] TA = +25°C
Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 295mA [2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
17.5 - 41
GHz
Gain
21 dB
Input Return Loss
8 dB
Output Return Loss
20 - 30 GHz
30 - 45 GHz
15
8
dB
dB
Output Power for 1 dB Compression
20 dBm
Saturated Output Power
23 dBm
Output IP3
27 dBm
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
295 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1 = Vgg2 = Vgg3 = Vgg4 between -1V to +0.3V (Typ. -0.3V) to achieve Idd1 = 50 mA, Idd2 = 50 mA, Idd3 = 75 mA, Idd4 = 120 mA
2 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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Pad Descriptions
2
Pad Number
1
Function
RFIN
v01.0208
HMC-AUH256
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
Pad Description
This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
2-5
Vdd1-4
Power supply voltage for amplifier. See Assembly Diagram
for required external components.
6
7 - 10
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Vgg1-4
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
2 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-AUH256.PDF ] | |
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