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What is HMC635LC4?

This electronic component, produced by the manufacturer "Hittite Microwave Corporation", performs the same function as "GaAs PHEMT MMIC Driver Amplifier".


HMC635LC4 Datasheet PDF - Hittite Microwave Corporation

Part Number HMC635LC4
Description GaAs PHEMT MMIC Driver Amplifier
Manufacturers Hittite Microwave Corporation 
Logo Hittite Microwave Corporation Logo 


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v00.1008
Typical Applications
9 The HMC635LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Functional Diagram
HMC635LC4
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Features
Gain: 18.5 dB [2]
P1dB: +22 dBm [2]
Output IP3: +27 dBm
Saturated Power: +23.5 dBm @ 15% PAE [2]
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
24 Lead Ceramic 4x4mm SMT Package: 16mm2
General Description
The HMC635LC4 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 18.5 dB of gain, +27 dBm
Output IP3, and +22 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635LC4 is capable
of providing up to +23.5 dBm of saturated output power
at 15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs).
9 - 172
Electrical Specifications
TA = +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA [1]
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
18 - 36
36 - 40
Gain [2]
15 18.5
15 17.5
Gain Variation Over Temperature
0.045 0.06
0.045 0.06
Input Return Loss
13 7
Output Return Loss
10 7
Output Power for 1 dB Compression (P1dB) [2]
19 22
16 21
Saturated Output Power (Psat) [2]
23.5
21.5
Output Third Order Intercept (IP3)
22 27
21 26
Noise Figure [2]
77
Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
280 280
[1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
[2] Board loss subtracted out for gain, power and noise figure measurements.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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HMC635LC4 equivalent
www.DataSheet4U.com
v00.1008
HMC635LC4
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
9
Pin Descriptions
Pin Number
1, 2, 4 - 8, 10,
12 - 15, 17 - 19, 24,
Ground Paddle
Function
GND
3 RFIN
16 RFOUT
Description
These pins and package bottom must be connected to
RF/DC ground
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
9, 11
Vgg1, Vgg2
Gate control for amplifier, please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly diagram for
required external components.
Interface Schematic
20 - 23
Vdd4 - Vdd1
Power Supply Voltage for the amplifier. See assembly
diagram for required external components.
Application Circuit
9 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com


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HMC635LC4The function is GaAs PHEMT MMIC Driver Amplifier. Hittite Microwave CorporationHittite Microwave Corporation

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