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GEMBR2150T PDF даташит

Спецификация GEMBR2150T изготовлена ​​​​«GTM CORPORATION» и имеет функцию, называемую «(GEMBR2070T - GEMBR20150T) SCHOTTKY BARRIER RECTIFIERS».

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Номер произв GEMBR2150T
Описание (GEMBR2070T - GEMBR20150T) SCHOTTKY BARRIER RECTIFIERS
Производители GTM CORPORATION
логотип GTM CORPORATION логотип 

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GEMBR2150T Даташит, Описание, Даташиты
ISSUED DATE :2005/08/01
REVISED DATE :2006/12/21C
GEMBR2070CT~20150CT
SCHOTTKY BARRIER RECTIFIERS
R E VE R SE VO LTAG E 7 0 V T O 1 5 0 V, C UR R E NT 2 0 A
Description
The GEMBR2070CT~20150CT are designed for use in low voltage, high frequency inverters, free wheeling
and polarity protection applications.
Features
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Maximum Ratings and Electrical Characteristics at Ta=25 unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%
Parameters
Symbol
Ratings
GEMBR
2070CT
GEMBR
2080CT
GEMBR
2090CT
GEMBR
2100CT
Max. Recurrent Peak Reverse Voltage
VRRM
70
80
90 100
Max. RMS Voltage
VRMS
49
56
63
70
Max. DC Blocking Voltage
VDC 70 80 90 100
Max. Average Forward @TC=120
Rectified Current (See Fig.1)
I(AV)
20
Peak Surge Forward Current
8.3ms single half sine-wave superimposed
on rated load (JEDEC METHOD)
IFSM
150
Voltage Rate of Charge (Rated VR)
Max. Forward
Voltage (Note 1)
IF=10A
IF=10A
IF=20A
IF=20A
@TJ=125
@TJ=25
@TJ=125
@TJ=25
Max. DC Reverse Current @TJ=25
At Rated DC Blocking Voltage @TJ=125
Typical Thermal Resistance (Note 2)
Operating Temperature Range
dv/dt
VF
IR
R JC
Tj
10000
0.75
0.85
0.85
0.95
0.1
100
2.0
-55 ~ +150
Storage Temperature Range
Tstg
-55 ~ +175
Notes: 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
GEMBR
2150CT
150
135
150
0.75
0.92
0.86
1.00
Unit
V
V
V
V
A
A
V/us
V
mA
/W
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GEMBR2150T Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2005/08/01
REVISED DATE :2006/12/21C
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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Номер в каталогеОписаниеПроизводители
GEMBR2150T(GEMBR2070T - GEMBR20150T) SCHOTTKY BARRIER RECTIFIERSGTM CORPORATION
GTM CORPORATION

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