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What is NTLUS3192PZ?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Single P-Channel 20 V MOSFET".


NTLUS3192PZ Datasheet PDF - ON Semiconductor

Part Number NTLUS3192PZ
Description Single P-Channel 20 V MOSFET
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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Advance Information
Power MOSFET
20 V, 4.2 A, mCoolt Single PChannel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
Lowest RDS(on) in 1.6x1.6 Package
ESD Protected
This is a Halide Free Device
This is a PbFree Device
Applications
High Side Load Switch
PA Switch and Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±8.0
3.4
2.4
4.2
1.5
Units
V
V
A
W
t 5 s TA = 25°C
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
ID
PD
IDM
TJ,
TSTG
2.3
2.2
1.6
0.6
17
-55 to
150
A
W
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 1.0 A
TL 260 °C
Gate-to-Source ESD Rating
(HBM) per JESD22A114F
ESD
1000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2009
May, 2009 Rev. P3
1
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) MAX
85 mW @ 4.5 V
115 mW @ 2.5 V
160 mW @ 1.8 V
250 mW @ 1.5 V
ID MAX
3.0 A
1.5 A
0.5 A
0.2 A
S
G
D
PChannel MOSFET
6 UDFN6
CASE 517AU
1 mCOOLt
MARKING
DIAGRAM
1
AA MG
G
AA = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTLUS3192PZ/D

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NTLUS3192PZ equivalent
NTLUS3192PZ
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
100
VGS = 8 V
Single Pulse
10 TC = 25°C
10 ms
100 ms
1 1 ms
10 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
dc
1 10
100
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
90
80
70
60
50 Duty Cycle = 0.5
40
30
20 0.2
10 0.1
0
1E06
0.05 0.02 0.01
1E05
1E04
RqJA = 85°C/W
Single Pulse
1E03
1E02
1E01
1E+00
t, TIME (s)
Figure 14. FET Thermal Response
1E+01
1E+02
1E+03
DEVICE ORDERING INFORMATION
Device
Package
Shipping
NTLUS3192PZTAG
UDFN6
(PbFree)
3000 / Tape & Reel
NTLUS3192PZTBG
UDFN6
(PbFree)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
NTLUS3192PZThe function is Single P-Channel 20 V MOSFET. ON SemiconductorON Semiconductor

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