PDF NTLUD3191PZ Data sheet ( Hoja de datos )

Número de pieza	NTLUD3191PZ
Descripción	Dual P-Channel 20 V MOSFET
Fabricantes	ON Semiconductor
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No Preview Available ! NTLUD3191PZwww.DataSheet4U.com Power MOSFET −20 V, −1.8 A, mCoolt Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving • ESD • This is a Halide Free Device • This is a Pb−Free Device Applications • High Side Load Switch • PA Switch • Battery Switch • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.0 −1.4 −1.0 −1.8 0.8 V V A W Continuous Drain Current (Note 2) t≤5s Steady State Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C TA = 25°C TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ID PD IDM TJ, TSTG IS TL 1.3 −1.1 −0.8 0.5 −8.0 -55 to 150 −1.0 260 A W A °C A °C Gate-to-Source ESD Rating (HBM) per JESD22−A114F ESD 1000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 250 mW @ −4.5 V 380 mW @ −2.5 V 500 mW @ −1.8 V 700 mW @ −1.5 V ID MAX −1.5 A −1.0 A −0.5 A −0.2 A D1 D2 G1 G2 S1 P−Channel MOSFET S2 6 1 UDFN6 CASE 517AT mCOOLt MARKING DIAGRAM 1 AC MG G AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 1 1 Publication Order Number: NTLUD3191PZ/D 1 page www.DataSheet4U.com NTLUD3191PZ TYPICAL CHARACTERISTICS 10 175 150 125 100 75 0.5 50 0.2 25 0.1 0.05 0 0.000001 0.00001 10 ms 1 100 ms VGS = −8 V 0.1 SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT 0.01 0.1 PACKAGE LIMIT 1 1 ms 10 ms dc 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 Figure 13. Maximum Rated Forward Biased Safe Operating Area Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 14. FET Thermal Response 1 10 100 1000 DEVICE ORDERING INFORMATION Device Package Shipping† NTLUD3191PZTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUD3191PZTBG UDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 5 Page

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