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PDF NTLUF4189NZ Data sheet ( Hoja de datos )
| Número de pieza | NTLUF4189NZ | |
| Descripción | Single N-Channel 30 V MOSFET Plus Schottky Barrier Diode | |
| Fabricantes | ON Semiconductor | |
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Power MOSFET and
Schottky Diode
30 V, N−Channel with 0.5 A Schottky
Barrier Diode, 1.6 x 1.6 x 0.55 mm
mCoolt Package
Features
• Low Qg and Capacitance to Minimize Switching Losses
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Low VF Schottky diode
• Halide Free
• Lead Free Package
• ESD Protected Gate
Applications
• DC-DC Boost Converter
• Color Display and Camera Flash Regulators
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±8.0
1.3
1.0
1.4
1.0
Units
V
V
A
W
t ≤ 5 s TA = 25°C
1.1
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
ID
0.8 A
0.6
Power Dissipation (Note 2)
TA = 25°C
PD
0.4 W
Pulsed Drain Current
tp = 10 ms
IDM
5.6
A
MOSFET Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Schottky Operating Junction & Storage
Temperature
TJ,
TSTG
-55 to
125
°C
Source Current (Body Diode) (Note 2)
IS 1.5 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2008
Decemober, 2008 − Rev. P4
1
http://onsemi.com
V(BR)DSS
30 V
VR MAX
30 V
MOSFET
RDS(on) MAX
250 mW @ 4.5 V
350 mW @ 3.0 V
425 mW @ 2.5 V
SCHOTTKY DIODE
VF TYP
0.52 V
ID MAX
1.4 A
IF MAX
0.5 A
DA
G
S
N−Channel MOSFET
6
1
K
Schottky Diode
UDFN6
CASE 517AT
mCOOLt
PIN CONNECTIONS
A1
K
6K
N/C 2
D3
5G
D
4S
(Top View)
MARKING DIAGRAM
1
AA MG
G
AA = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTLUF4189NZ/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NTLUF4189NZ.PDF ] | |
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