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PDF HMC263LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC263LP4E | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0709
8
Typical Applications
The HMC263LP4E is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Functional Diagram
HMC263LP4E
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Features
Low Noise Figure: 2.2 dB
High Gain: 20 dB
Single Positive Supply: +3V or +5V
DC Blocked RF I/Os
No External Matching
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC263LP4E is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 24 to 36 GHz and is housed in a leadless plastic
SMT package. The HMC263LP4E utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3V @ 58 mA with a noise figure of
2.2 dB. The HMC263LP4E may be used in conjunc-
tion with HMC264LC3B or HMC265LM3 mixers to
realize a millimeterwave system receiver. The RF I/Os
are DC blocked and matched to 50 Ohms requiring no
external components.
Electrical Specifications, TA = +25° C, Vdd = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (@ Vdd = +3.0V)
Min. Typ. Max.
24 - 27
19 21
27
0.03
2.0 3.0
12
10
6
9
16
58 77
Min.
17
Typ.
27 - 32
19
0.03
2.2
9
9
8
11
18
58
Max.
23
3.0
77
Min.
15
Typ.
32 - 36
17
0.03
2.5
11
9
9
12
20
58
Max.
20
4.0
77
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v01.0709
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-5 dBm
175 °C
0.7 W
130 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
HMC263LP4E
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC263LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL3 [2]
Package Marking [1]
H263
XXXX
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC263LP4E.PDF ] | |
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