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CHT05N1PT PDF даташит

Спецификация CHT05N1PT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «NPN General Purpose Transistor».

Детали детали

Номер произв CHT05N1PT
Описание NPN General Purpose Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHT05N1PT Даташит, Описание, Даташиты
www.DataSheet4U.com
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN General Purpose Transistor -
VOLTAGE 60 Volts CURRENT 0.5 Ampere
APPLICATION
* General purpose applications.
CHT05N1PT
FEATURE
* Small surface mounting type. (FBPT-923)
* Low current (Max.=500mA).
* Suitable for high packing density.
* Low voltage (Max.=60V) .
* High saturation current capability.
CONSTRUCTION
* NPN General Purpose Transistor
CIRCUIT
(1)B
C (3)
E (2)
FBPT-923
0.5±0.05
1.0±0.05
0.37(REF.)
0.25(REF.)
0.05±0.04
0.42±0.05
1.0±0.05
0.68±0.05
0.3±0.05
Dimensions in millimeters
0.26±0.05
FBPT-923
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
55
55
MAX.
60
60
6
500
500
100
100
+150
+150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2006-07









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CHT05N1PT Даташит, Описание, Даташиты
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( CHT05N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
VCEsat
VBEon
Ccb
fT
collector-emitter saturation
voltage
base-emitter voltage
collector-base capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 60 V
IC = 0; VEB = 4 V
VCE = 1.0 V; note 1
IC = 10 mA
IC = 100 mA
MIN.
MAX.
0.1
0.1
UNIT
uA
uA
100
100
IC = 100 mA; I B =10 mA
IC = 100 mA; VCE = 1.0 V
IE = ie = 0; VCB =10V; f = 1 MHz
IC = 100 mA; VCE =1.0 V ;
f = 100 MHz
80
0.25 V
1.2 V
10 pF
MHz










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Номер в каталогеОписаниеПроизводители
CHT05N1PTNPN General Purpose TransistorChenmko Enterprise
Chenmko Enterprise

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