|
|
PDF NDD04N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDD04N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDD04N60Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NDF04N60Z,www.DataSheet4U.com NDP04N60Z,
NDD04N60Z
N-Channel Power MOSFET
1.8 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• Lighting Ballasts
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF NDD/NDP Unit
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
TA = 100°C
Pulsed Drain Current, VGS @ 10V
Power Dissipation (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
L = 6.4 mH, ID = 4.0 A
ESD (HBM) (JESD 22−114−B)
RMS Isolation Voltage (t = 0.3
sec., R.H. ≤ 30%, TA = 25°C)
(Figure 13)
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
VISO
600 (Note 1)
4.0 (Note 2)
2.7 (Note 2)
14 (Note 2)
28 95
±30
51
2500
4500
−
V
A
A
A
W
V
mJ
V
V
Peak Diode Recovery
dv/dt
4.5 (Note 3)
V/ns
Continuous Source Current
(Body Diode)
IS
4.0 A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
TL
TPKG
300 °C
260
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
http://onsemi.com
VDSS
600 V
RDS(ON) (TYP) @ 2 A
1.8 Ω
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING DIAGRAMS
4
Drain
NDF04N60ZG
or
NDP04N60ZG
AYWW
Gate
Source 4
Drain
1 23
Gate Drain Source
Drain
A
Y
WW
G
2
1 Drain 3
Gate Source
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NDF04N60Z/D
1 page  
www.DataSheet4U.com
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1 2.0%
1.0%
0.01 SINGLE PULSE
NDF04N60Z, NDP04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 12. Thermal Impedance for NDF04N60Z
10
100 1000
ORDERING INFORMATION
Order Number
Package
Shipping†
NDF04N60ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP04N60ZG
TO−220AB
(Pb−Free)
In Development
NDD04N60Z−1G
IPAK
(Pb−Free)
In Development
NDD04N60ZG
DPAK
(Pb−Free)
In Development
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDD04N60Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDD04N60Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |