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PDF NTD4906N Data sheet ( Hoja de datos )
| Número de pieza | NTD4906N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD4906Nwww.DataSheet4U.com
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA)
(Note 1)
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
"20
14
9.9
V
V
A
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current
2)
(RqJA)
(Note
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
C(Nuortreen1t)(RqJC)
TA = 25°C
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.6 W
10.3 A
7.3
1.38 W
54 A
38
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
37.5
223
90
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
32 A
6.5 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 31 A, RG = 25 W)
EAS
48 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.5 mW @ 10 V
8.0 mW @ 4.5 V
D
ID MAX
54 A
N−Channel
G
S
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AD CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4906N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 1
1
Publication Order Number:
NTD4906N/D
1 page  
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NTD4906N
TYPICAL PERFORMANCE CURVES
2500
2000
1500
TJ = 25°C
VGS = 0 V
Ciss
1000
500
0
0
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1
1000
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
100
10 ms
10
1
0.1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 ms
1 ms
10 ms
dc
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
15
12 QT
9
VGS
6 QGS QGD
3
VDD = 15 V
VGS = 10 V
ID = 30 A
0 TJ = 25°C
0 5 10 15 20 25 30
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
TJ = 125°C
10
5
TJ = 25°C
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
50
45 ID = 31 A
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTD4906N.PDF ] | |
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