NTD4910N PDF даташит
Спецификация NTD4910N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTD4910N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
8 Pages
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Power MOSFET
30 V, 37 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA)
(Note 1)
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
"20
11.2
7.9
V
V
A
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
C(Nuorrteen2t)(RqJA)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
C(Nuortreen1t)(RqJC)
TA = 25°C
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.6 W
8.2 A
5.8
1.37 W
37 A
26
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
27.3
152
60
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
23 A
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
EAS 25.3 mJ
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 22.5 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
13 mW @ 4.5 V
D
ID MAX
37 A
N−Channel
G
S
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AD CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4910N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NTD4910N/D
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NTD4910N
www.DataTSHheEeRt4MUA.cLomRESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Tab (Drain)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 10 V, VDS = 15 V,
ID = 30 A
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
5.5
4.3
58.5
109.7
Unit
°C/W
Min Typ Max Unit
30
15
V
mV/°C
1.0
10
"100
mA
nA
1.0 1.6 2.2 V
4.0 mV/°C
7.5 9.0 mW
7.5
10.6 13
10.6
40 S
1203
460
12.5
6.8
1.95
3.9
1.1
15.4
pF
nC
nC
11.6 ns
21.8
16.5
4.2
7.3 ns
19.5
20.2
2.0
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NTD4910N
www.DataESLheEeCt4TUR.cIComAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt= 100 A/ms,
tb IS = 30 A
Reverse Recovery Time
PACKAGE PARASITIC VALUES
QRR
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
7. Assume terminal length of 110 mils.
LS
LD
LD
LG
RG
TA = 25°C
Min
Typ Max
0.91 1.1
0.82
27
14
13
17
2.99
0.0164
1.88
4.9
1.0
2.0
Unit
V
ns
nC
nH
W
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD4910NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4910N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4910N−35G
IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
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NTD4910N | Power MOSFET ( Transistor ) | ON Semiconductor |
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