NSR01F30NXT5G PDF даташит
Спецификация NSR01F30NXT5G изготовлена «ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | NSR01F30NXT5G |
Описание | Schottky Barrier Diode |
Производители | ON Semiconductor |
логотип |
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Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No−lead) package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
Features
• Very Low Forward Voltage Drop − 370 mV @ 10 mA
• Low Reverse Current − 7.0 mA @ 10 V VR
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• Very High Switching Speed
• Low Capacitance − CT = 7 pF
• This is a Halide−Free Device
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 V
Forward Current (DC)
IF 100 mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
4.0
A
ESD Rating:
Human Body Model
ESD
8.0
kV
Machine Model
400 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
DSN2
(0201)
CASE 152AA
MARKING
DIAGRAM
PIN 1
XXXX
YYY
XXXX = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR01F30NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NSR01F30/D
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NSR01F30NXT5G
www.DataTSHhEeRetM4UA.cLomCHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
400
312
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
170
735
Storage Temperature Range
Tstg −40 to +125
Junction Temperature
TJ +125
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR mA
7.0
50
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
VF V
0.37
0.50
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT 7.0 pF
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NSR01F30NXT5G
TYPICAL CHARACTERISTICS
100
10
150°C
1
125°C
0.1 75°C
25°C
0.01 −25°C
1.0E+04
1.0E+02
1.0E+00
1.0E−02
150°C
125°C
75°C
25°C
−25°C
0.001
0
0.1 0.2 0.3 0.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
0.5
1.0E−04
0.6 0
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
20
18 TA = 25°C
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
30
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NSR01F30NXT5G | Schottky Barrier Diode | ON Semiconductor |
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