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PDF NDP06N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDP06N60Z | |
| Descripción | Single N-Channel TO-220FP MOSFET | |
| Fabricantes | ON Semiconductor | |
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NDF06N60Z, NDP06N60Z
N-Channel Power MOSFET
0.98 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• Lighting Ballasts
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF06N60Z NDP06N60Z Unit
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, L = 6.3 mH,
ID = 6.0 A
ESD (HBM)
(JESD 22−114−B)
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
600 (Note 1)
6.0 (Note 2)
3.8 (Note 2)
20 (Note 2)
31 113
±30
113
V
A
A
A
W
V
mJ
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 13)
Peak Diode Recovery
VISO
dv/dt
4500
−
4.5 (Note 3)
V
V/ns
Continuous Source
Current (Body Diode)
IS
6.0 A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
TL
TPKG
300 °C
260
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
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VDSS
600 V
RDS(ON) (TYP) @ 3 A
0.98 Ω
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
NDF06N60ZG
or
NDP06N60ZG
AYWW
Gate
Source
Drain
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NDF06N60ZG
NDP06N60ZG
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NDF06N60Z/D
1 page  
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1 2.0%
1.0%
0.01
SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 12. Thermal Impedance for NDF06N60Z
10
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
100 1000
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http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDP06N60Z.PDF ] | |
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