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PDF NDP10N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDP10N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
0.65 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
• Zener Diode−protected Gate
• 100% Avalanche Tested
• ROHS Compliant
• This is a Pb−Free Device
Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• ATX Power Supplies
• Lighting Ballasts
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF10N60Z NDP10N60Z Unit
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
TA = 100°C
VDSS
ID
ID
600 (Note 1)
10 (Note 2)
5.7 (Note 2)
V
A
A
Pulsed Drain Current,
VGS @ 10 V
IDM
36 (Note 2)
A
Power Dissipation (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, L = 6.0 mH,
ID = 10 A
PD
VGS
EAS
36 125
±30
300
W
V
mJ
ESD (HBM)
(JESD 22−114−B)
Vesd
3900
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 13)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 3)
V
V/ns
Continuous Source
Current (Body Diode)
IS
10 A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
TL
TPKG
300 °C
260
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
www.Dat3a.ShISee≤t41U0.Aco, mdi/dt ≤ 200 A/ms, VDD = 80% BVDSS
http://onsemi.com
VDSS
600 V
RDS(ON) (TYP) @ 5 A
0.65 Ω
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
NDF10N60ZG
or
NDP10N60ZG
AYWW
Gate
Source
Drain
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NDF10N60ZG
NDP10N60ZG
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 1
1
Publication Order Number:
NDF10N60Z/D
1 page  
NDF10N60Z, NDP10N60Z
10
Duty Cycle = 50%
1 20%
10%
5%
0.1 2%
1%
TYPICAL CHARACTERISTICS
0.01
Single Pulse Simulation
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 12. Thermal Impedance for NDF10N60Z
10
100 1000
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
www.DataSheet4U.com
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDP10N60Z.PDF ] | |
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