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PDF WV3EG64M64ETSU-D4 Data sheet ( Hoja de datos )
| Número de pieza | WV3EG64M64ETSU-D4 | |
| Descripción | 512MB - 64Mx64 DDR SDRAM | |
| Fabricantes | White Electronic Designs | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WV3EG64M64ETSU-D4 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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White Electronic Designs WV3EG64M64ETSU-D4
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM
FEATURES
Fast data transfer rate: PC3200 & PC2700
Clock speeds of 200MHz & 166MHz
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency : DDR400 (3 clock),
DDR333 (2.5 clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, 7.8µs refresh interval (8K
(64ms refresh)
Serial presence detect (SPD) with EEPROM
Serial presence detect with EEPROM
VCC = VCCQ = +2.5V ±0.2V (166MHz)
VCC = VCCQ = +2.6V ±0.1V (200MHz)
Gold edge contacts
JEDEC standard 200 pin, small-outline, SO-DIMM
package
• PCB height option:
D4: 31.75 mm (1.25”) TYP
www.DataSheet4U.com
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
DESCRIPTION
The WV3EG64M64ETSU is a 64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
components. The module consists of eight 64Mx8 DDR
SDRAMs TSOP-II packages mounted on a 200 pin FR4
substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
OPERATING FREQUENCIES
Clock Speed
CL-tRCD-tRP
DDR400@CL=3
200MHz
3-3-3
166MHz
2.5-3-3
March 2006
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 page  
White Electronic Designs WV3EG64M64ETSU-D4
PRELIMINARY
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 100MHz
Parameter
Symbol
Input capacitance (A0 ~ A12, BA0 ~ BA1, RAS#, CAS# WE#)
Input capacitance (CKE0)
Input capacitance (CS0#)
CIN1
CIN2
CIN3
Input capacitance (CK0, CK0#, CK1, CK1#)
Input capacitance (DM0 ~ DM7)
CIN4
CIN5
Input capacitance (DQ0 ~ DQ63), (DQS0 ~ DQS7)
COUT1
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
Min
20
20
20
12
8
8
Max Units
28 pF
28 pF
28 pF
16 pF
9 pF
9 pF
Parameter
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Differential Voltage, CK and CK# inputs
Input crossing point voltage, CK and CK# input
AC OPERATING CONDITIONS
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
VREF + 0.31
0.7
0.5*VCCQ - 0.2
Max
VREF - 0.31
VCCQ + 0.6
0.5*VCCQ + 0.2
Units
V
V
V
V
www.DataSheet4U.com
March 2006
Rev. 0
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
5 Page 
White Electronic Designs WV3EG64M64ETSU-D4
PRELIMINARY
PART NUMBERING GUIDE
WEDC
MEMORY (SDRAM)
DDR
GOLD
DEPTH)
BUS WIDTH
x8
TSOP
(400M/bs = VCC/VCCQ = +2.6V± 0.1V)
2.5V
UNBUFFERED
SPEED (Mbs)
PACKAGE 200 PIN
www.DataSheet4U.com
TEMPERATURE RANGE
(Blank = 0°C - 70°C ambient)
(I = -40°C to 85°C DRAM case temp)
COMPONENT VENDOR NAME
(M = MICRON)
(S = SAMSUNG)
G = RoHS COMPLIANT
W 3 E G 64M 64 E T S U xxx D4 x x G
March 2006
Rev. 0
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet WV3EG64M64ETSU-D4.PDF ] | |
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