WFU2N60 PDF даташит
Спецификация WFU2N60 изготовлена «Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | WFU2N60 |
Описание | N-Channel MOSFET |
Производители | Wisdom technologies |
логотип |
8 Pages
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Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge (Typical 9.5nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
D-PAK, I-PAK
2
1
3
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
www.DataSheet4U.comEAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
1.8
1.1
6.0
±30
120
4.4
4.5
44
0.35
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
2.87
50
110
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
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WFD/U2N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
www.DataSheet4U.coQmgd
Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 0.9A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =2.0A, RG =25Ω
(Note 4, 5)
VDS =480V, VGS =10V, ID =2.0A
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =1.8A, VGS =0V
IS=2.0A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 68mH, IAS =1.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
4.0 5.0
V
Ω
320 420
35 46
4.5 6.0
pF
8 30
23 60
25 60
28 70
9.5 13
1.6 -
4.0 -
ns
nC
Typ.
-
-
-
230
1.0
Max.
1.8
6.0
1.4
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
5.5 V
Bottom: 5.0 V
10-1
10-2
10-1
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
www.DataSheet4U.com
18
15
VGS = 10V
12
VGS = 20V
9
6
3
※ Note : TJ = 25℃
0
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400 Ciss
200
0
10-1
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100 150oC
10-1
2
25oC
-55oC
※ Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
※ Note : ID = 2.0 A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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