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PDF WFD430 Data sheet ( Hoja de datos )
| Número de pieza | WFD430 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Wisdom technologies | |
| Logotipo |  |
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Wisdom Semiconductor
WFD430/WFU430
N-Channel MOSFET
Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
■ Gate Charge (Typical 25nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
D-PAK, I-PAK
2
1
3
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
www.DataSheet4UV.GcoSm
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
4.0
2.4
16
±30
292
4.8
5.5
48
0.38
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
2.6
50
110
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 page  
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
10V
www.DataSheet4U.com
10V
tp
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
DUT
EAS=--21--LIAS2
------B--V--D--S-S-------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
VDD
VDS(t)
tp Time
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFD430.PDF ] | |
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