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даташит HERA807G PDF ( Datasheet )

HERA807G Datasheet Download - Taiwan Semiconductor Company

Номер произв HERA807G
Описание (HERA801G - HERA808G) Glass Passivated High Efficient Rectifiers
Производители Taiwan Semiconductor Company
логотип Taiwan Semiconductor Company логотип 

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HERA807G Даташит, Описание, Даташиты
HERA801G THRU HERA808G
Features
8.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HERA HERA HERA HERA HERA HERA HERA HERA Units
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V
www.DataMSahxeimetu4mU.RcoMmS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TC =100
VDC 50 100 200 300 400 600 800 1000 V
I(AV) 8.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@8.0A
VF
1.0
1.3 1.7
V
Maximum DC Reverse Current
@ TA=25at Rated DC Blocking Voltage
@ TA=125
IR
10.0
400
uA
uA
Maximum Reverse Recovery Time (Note 1) Trr
50
80 nS
Typical Junction Capacitance (Note 2)
Cj
65
55 pF
Typical Thermal Resistance (Note 3)
RθJC
2.0 /W
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
- 342 -







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HERA807G Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES (HERA801G THRU HERA808G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
20
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
16
12
8
4
0 0 50 100
CASE TEMPERATURE. (oC)
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
150
Tj=1250C
100
Tj=750C
10
1
Tj=250C
120
www.DataSheet4U.9c0om
60
8.3ms Single Half Sine Wave
JEDEC Method
30
0
12
5 10
20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.5- TYPICAL JUNCTION CAPACITANCE
180
150
120
90
60
30
HERA806HGE~HREAR80A18G08~GHERA805G
0
12
5 10 20
50
100
REVERSE VOLTAGE. (V)
200
500 1000
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
30
10
3
HERA805G
HERA806G~HERA808G
1
0.3
0.1
0.03
0.01
0.4
0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE. (V)
1.6 1.8
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