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PDF WTL2602 Data sheet ( Hoja de datos )

Número de pieza WTL2602
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Weitron Technology 
Logotipo Weitron Technology Logotipo



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No Preview Available ! WTL2602 Hoja de datos, Descripción, Manual

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1,2,5,6 DRAIN
3
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON) < 34mΩ@VGS=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
4 SOURCE
WTL2602
DRAIN CURRENT
6.3 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
6
5
4
1
2
3
SOT-26
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Drain-Source Voltage
Rating
Gate-Source Voltage
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Continuous Drain Current3, VGS@4.5V, TA=25˚C
TA=70˚C
Symbol
VDS
VGS
ID
Pulsed Drain Current1,2
Total Power Dissipation(TA=25˚C)
Maximum Junction-ambient
Operating Junction and Storage Temperature Range
IDM
PD
RθJA
TJ,Tstg
Value
20
±12
6.3
5
30
2
62.5
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTL2602=2602
WEITRON
http:www.weitron.com.tw
1/6
08-Sep-05

1 page




WTL2602 pdf
WTL2602
14
12 I D = 5.3A
VDS = 16V
10
8
6
4
2
0
0 5 10 15 20 25
QG , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
1000
100
f = 1.0MHz
Ciss
Coss
Crss
0
1 5 9 13 17 21 25 29
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
100 1
Duty factor = 0.5
10
1ms
1
10ms
100ms
0.1
TA = 25°C
Single Pulse
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0.01
0.1
1
Is
DC
10 100
VDS , Drain-to-Source Voltage(V)
Fig 9. Maximum Safe Operation Area
0.2
0.1
0.1
0.05
0.01
0.01
Single pulse
PDM
t
T
Duty factor = t / T
Peak Tj=PDM x R ja + Tu
R ja=156°C / W
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t, Pulse Width(s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
08-Sep-05

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