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HMS1M32M8S PDF даташит

Спецификация HMS1M32M8S изготовлена ​​​​«Hanbit Electronics» и имеет функцию, называемую «High-Speed SRAM MODULE 4Mbyte».

Детали детали

Номер произв HMS1M32M8S
Описание High-Speed SRAM MODULE 4Mbyte
Производители Hanbit Electronics
логотип Hanbit Electronics логотип 

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HMS1M32M8S Даташит, Описание, Даташиты
HANBit
HMS1M32M8S
HAN
BI T
High-Speed SRAM MODULE 4Mbyte(1M x 32-Bit)
Part No. HMS1M32M8S, HMS1M32Z8S
GENERAL DESCRIPTION
The HMS1M32M8S is a high-speed static random access memory (SRAM) module containing 1,048,576 words
organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-
sided, FR4-printed circuit board.
The HMS1M32M8S also support low data retention voltage for battery back-up operations with low data retention
current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2,
/CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can
set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible
FEATURES
Š Part identification
- HMS1M32M8S : SIMM design
- HMS1M32Z8S : ZIP design
Pin-Compatible with the HMS1M32M8S
Š Access times : 10, 12, 15, 17 and 20ns
Š High-density 4MByte design
wwwŠ.DaHtaiSghhe-eret4lUia.cboimlity, high-speed design
Š Single + 5V ±0.5V power supply
Š All inputs and outputs are TTL-compatible
Š FR4-PCB design
Š 72-Pin SIMM Design
OPTIONS MARKING
Š Timing
10ns access
-10
12ns access
-12
15ns access
-15
17ns access
-17
20ns access
Š Packages
-20
72-pin SIMM
M
Vss 1
A3 2
A2 3
A1 4
A0 5
Vcc 6
A11 7
/OE 8
A10 9
Vcc 10
/CE_LL2 11
/CE_LL1 12
DQ7 13
DQ0 14
DQ1 15
DQ2 16
DQ6 17
DQ5 18
DQ4 19
DQ3 20
A15 21
A17 22
/WE 23
A13 24
Vcc 25
DQ8 26
DQ9 27
DQ10 28
/CE_LM2 29
Vcc 30
/CE_LM1 31
DQ15 32
DQ14 33
DQ13 34
DQ12 35
DQ11 36
1
PIN ASSIGNMENT
A18 37
A16 38
Vss 39
A6 40
Vcc 41
A5 42
A4 43
Vcc 44
/CE_UM2 45
/CE_UM1 46
DQ23 47
DQ16 48
DQ17 49
DQ18 50
DQ22 51
DQ21 52
DQ20 53
DQ19 54
Vcc 55
A14 56
A12 57
A7 58
Vcc 59
A8 60
A9 61
DQ24 62
DQ25 63
DQ26 64
/CE_UU2 65
/CE_UU1 66
DQ31 67
DQ30 68
DQ29 69
DQ28 70
DQ27 71
Vss 72
SIMM
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HANBit Electronics Co.,Ltd.









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HMS1M32M8S Даташит, Описание, Даташиты
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQD0Q-D0-Q3311
A0-AA109-18
DQ 32
A20
/CE-UU1
A0-19
DQ24-31
/WE
/OE U1
/CE
/CE-UM1
A0-19
DQ16-23
/WE
/OE U2
/CE
/CE-LM1
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/WE
/OE
/CE-LL1
A0-19
DQ 8-15
/WE
/OE U3
/CE
A0-19
DQ 0-7
/WE
/OE U4
/CE
/CE-UU2
/CE-UM2
/CE-LM2
/WE
/OE
/CE-LL2
HMS1M32M8S
A0-19
DQ24-31
/WE
/OE U5
/CE
A0-19
DQ16-23
/WE
/OE U6
/CE
A0-19
DQ 8-15
/WE
/OE U7
/CE
A0-19
DQ 0-7
/WE
/OE U8
/CE
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
/OE /CE /WE
DQ
X H X HIGH-Z
H L H HIGH-Z
L LH
Q
X LL
D
2
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
HANBit Electronics Co.,Ltd.









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HMS1M32M8S Даташит, Описание, Даташиты
HANBit
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
HMS1M32M8S
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD 8W
Storage Temperature
TSTG -55oC to +125oC
Operating Temperature
TA 0oC to +70oC
Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
SYMBOL
Supply Voltage
VCC
Ground
VSS
Input High Voltage
VIH
Input Low Voltage
VIL
* VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
** VIH(Max.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
MIN
4.5V
0
2.2
-0.5*
www.DataSheet4U.com
DC AND OPERATING CHARACTERISTICS (1)
(0oC TA 70 oC ; Vcc = 5V ± 0.5V )
TYP.
5.0V
0
-
-
MAX
5.5V
0
Vcc+0.5V**
0.8V
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
TEST CONDITIONS
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0mA
IOL = 8.0mA
SYMBO
L
ILI
IL0
VOH
VOL
MIN
-2
MAX
2
-2 2
2.4 -
0.4
UNITS
µA
µA
V
V
3 HANBit Electronics Co.,Ltd.










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