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PDF HMS1M32Z8V Data sheet ( Hoja de datos )
| Número de pieza | HMS1M32Z8V | |
| Descripción | SRAM MODULE 4Mbyte | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMS1M32M8V
HAN
BI T
SRAM MODULE 4Mbyte(1M x 32-Bit) 3.3V
Part No. HMS1M32M8V, HMS1M32Z8V
GENERAL DESCRIPTION
The HMS1M32M8V is a high-speed static random access memory (SRAM) module containing 1,048,576 words
organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, double-
sided, FR4-printed circuit board.
PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable (/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.
FEATURES
Part identification
- HMS1M32M8V : SIMM design
- HMS1M32Z8V : ZIP design
→ Pin-Compatible with the HMS1M32M8V
Fast access times : 10, 12ns and 15ns
High-density 4MByte design
High-reliability high-speed design
www.DaStainSghleeet+4U3.c.3omV ±0.3V power supply
Easy memory expansion /CE and /OE functions
All inputs and outputs are LVTTL-compatible
Industry-standard pinout
FR4-PCB design
Low power Dissipation
OPTIONS
MARKING
Timing
10ns access
-10
12ns access
-12
15ns access
-15
NC 1
NC 2
PD2 3
PD3 4
Vss 5
PD0 6
PD1 7
DQ0 8
DQ8 9
DQ1 10
DQ9 11
DQ2 12
DQ10 13
DQ3 14
DQ11 15
Vcc 16
A0 17
A7 18
A1 19
A8 20
A2 21
A9 22
DQ12 23
DQ4 24
DQ13 25
DQ5 26
DQ14 27
DQ6 28
DQ15 29
DQ7 30
Vss 31
/WE 32
A15 33
A14 34
/CE2 35
/CE1 36
PIN ASSIGNMENT
/CE4 37
/CE3 38
A17 39
A16 40
/OE 41
Vss 42
DQ24 43
DQ16 44
DQ25 45
DQ17 46
DQ26 47
DQ18 48
DQ27 49
DQ19 50
A3 51
A10 52
A4 53
A11 54
A5 55
A12 56
Vcc 57
A13 58
A6 59
DQ20 60
DQ28 61
DQ21 62
DQ29 63
DQ22 64
DQ30 65
DQ23 66
DQ31 67
Vss 68
A18 69
A19 70
NC 71
NC 72
Packages
72-pin SIMM
M
SIMM
TOP VIEW
PD0 = Vss
PD1 = Open
PD2 = Vss
PD3 = Open
HANBit Electronics Co.,Ltd.
1 page  
HANBit
READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
HMS1M32M8V
SYMBOL
tRC
tAA
tCO
tOE
tOLZ
tLZ
tOHZ
tHZ
tOH
tPU
tPD
-12
MIN MAX
12
12
12
6
0
3
06
06
3
0
12
-15
MIN MAX
15
15
15
7
0
3
07
07
3
0
15
-20
MIN MAX
UNIT
20 ns
20 ns
20 ns
9 ns
0 ns
3 ns
0 9 ns
0 9 ns
3 ns
0 ns
20 ns
WRITE CYCLE
PARAMETER
SYMBOL
Write Cycle Time
tWC
w
Chip Select to End of Write
ww.DataShee
t
4
U
.
c
o
m
tCW
Address Set-up Time
tAS
Address Valid to End of Write
tAW
Write Pulse Width
tWP
Write Recovery Time
tWR
Write to Output High-Z
tWHZ
Data to Write Time Overlap
tDW
Data Hold from Write Time
tDH
End of Write to Output Low-Z
tOW
-12
MIN MAX
12
8
0
8
8
0
06
6
0
3
-15
MIN MAX
15
10
0
10
10
0
07
7
0
3
-20
UNIT
MIN MAX
20 ns
12 ns
0 ns
12 ns
12 ns
0 ns
0 9 ns
9 ns
0 ns
3 ns
HANBit Electronics Co.,Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMS1M32Z8V.PDF ] | |
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