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S8559 PDF даташит

Спецификация S8559 изготовлена ​​​​«Hamamatsu Corporation» и имеет функцию, называемую «Si photodiode Detector».

Детали детали

Номер произв S8559
Описание Si photodiode Detector
Производители Hamamatsu Corporation
логотип Hamamatsu Corporation логотип 

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S8559 Даташит, Описание, Даташиты
PHOTODIODE
Si photodiode
S8559
Detector for X-ray monitor
Features
l Si photodiode coupled to low cost CsI scintillator
l Ideal for detection of X-ray energy below 100 keV
Applications
l X-ray detection
l X-ray monitors
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
Value
5
-10 to +60
-20 to +70
wwws.DaEtaleSchetreict4aUl.caonmd optical characteristics (without scintillator, Ta=25 °C)
Parameter
Symbol
Condition
Min.
Spectral response range
λ
-
Peak sensitivity wavelength
λp
Photo sensitivity
S λ=500 nm
-
Dark current
ID VR=10 mV
-
Terminal capacitance
Ct VR=0 V, f=10 kHz
-
Typ.
190 to 1000
720
0.26
2
950
Max.
-
-
-
50
-
s X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 nm)
X-ray tube voltage
Typ.
120 kV
52
Note) Depends on equipment and measurement conditions.
Unit
V
°C
°C
Unit
nm
nm
A/W
pA
pF
Unit
nA
Handling precautions
Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence.
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S8559 Даташит, Описание, Даташиты
s Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
Si photodiode S8559
s Terminal capacitance vs. reverse voltage
100 nF
(Typ. Ta=25 ˚C)
100 pA
10 pA
1 pA
10 nF
1 nF
100 fA
0.01
0.1 1
REVERSE VOLTAGE (V)
s Dimensional outline (unit: mm)
10.1 ± 0.1
10
KSPDB0152EA
100 pF
0.1
1
REVERSE VOLTAGE (V)
10
KSPDB0153EA
PHOTOSENSITIVE
SURFACE
CsI (TI) 8.9
t=3.0
www.DataSheet4U.com
0.5
LEAD
ANODE
TERMINAL MARK
9.2 ± 0.3
7.4 ± 0.2
KSPDA0145EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1051E02
2 Jan. 2004 DN










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