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PDF HAF2026RJ Data sheet ( Hoja de datos )
| Número de pieza | HAF2026RJ | |
| Descripción | Silicon N Channel Power MOSFET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2026RJ (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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HAF2026RJ
Silicon N Channel Power MOS FET
Power Switching
REJ03G1255-0200
Rev.2.00
Jun 02, 2006
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (5 to 6 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• Built-in the current limitation circuit
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
1 234
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
DD
78
DD
56
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G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
MOS1
1
S
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
MOS2
3
S
Rev.2.00 Jun 02, 2006 page 1 of 8
1 page  
HAF2026RJ
Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
300
VGS = 5 V
200
100 VGS = 10 V
ID = 0.5 A, 0.2 A
ID = 0.5 A, 0.2 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
1000
500
200
100
50
20
10
5
2
1
0.01 0.02
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.05 0.1 0.2 0.5 1
Reverse Drain Current IDR (A)
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Reverse Drain Current vs.
Source to Drain Voltage
1.0
Pulse Test
0.8
0.6 VGS = 5 V
0.4
0V
0.2
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
10
VDS =10 V
3 Pulse Test
Tc = –25°C
1
0.3 25°C
75°C
0.1
0.03
0.01
0.003
0.001
0.01
0.03 0.1 0.3
Drain Current ID (A)
1
Switching Characteristics
100
VGS = 5 V, VDD = 30 V
PW = 300 µs, duty < 1 %
30
10
3
tr
td(on)
1 tf
td(off)
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Drain Current ID (A)
1
1000
Typical capacitance vs.
Drain to Source Voltage
100
10
VGS = 0
f = 1 MHz
1
0 10 20 30 40
Drain to Source VDS (V)
50
Rev.2.00 Jun 02, 2006 page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HAF2026RJ.PDF ] | |
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