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PDF NTTFS4932N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4932N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS4932N
Power MOSFET
30 V, 79 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Low−Side DC−DC Converters
• Power Load Switch
• Notebook Battery Management
• Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
18 A
TA = 85°C
13
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
25.5 A
18.5
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
www.DataPRSoqhJweAee(tr4NDUoi.tsecsoi2pm)ation
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.5
11
8.0
0.85
79
57
43
235
75
−55 to
+150
39
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy EAS 92.4 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 43 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
ID MAX
79 A
N−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4932 D
S AYWWG D
GGD
4932
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4932NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4932NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4932N/D
1 page  
NTTFS4932N
TYPICAL CHARACTERISTICS
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
www.DataSheet4U.Fcoigmure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10
1 VGS = 20 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
9 QT
8
7
6
5
4
Qgd
Qgs
3 TJ = 25°C
2 VDD = 15 V
1
VGS = 10 V
ID = 20 A
0
0 4 8 12 16 20 24 28 32 36 40 44 48
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
TJ = 125°C
15
10
5
0 TJ = 25°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
90 ID = 43 A
80
70
60
50
40
30
20
10
0
25
50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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