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SCR6C60 PDF даташит

Спецификация SCR6C60 изготовлена ​​​​«SemiWell Semiconductor» и имеет функцию, называемую «Silicon Controlled Rectifiers».

Детали детали

Номер произв SCR6C60
Описание Silicon Controlled Rectifiers
Производители SemiWell Semiconductor
логотип SemiWell Semiconductor логотип 

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SCR6C60 Даташит, Описание, Даташиты
SemiWell Semiconductor
SCR6C60
Silicon Controlled Rectifiers
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
General Description
2. Anode
3. Gate
1. Cathode
TO-126
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
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ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t I2t for Fusing
Half Sine Wave : TC = 106 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
3
2
1
Ratings
600
3.8
6
66
21
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
Dec, 2002. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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SCR6C60 Даташит, Описание, Даташиты
SCR6C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
VAK = VDRM
TC = 25 °C
TC = 125 °C
ITM = 9 A
tp=380
VAK = 6 V(DC), RL=10 Ω
TC = 25 °C
10
200
1.6 V
15 mA
VGT Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C
1.5 V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
Voltage
Gate open
TJ = 125°C
200
V/
IH Holding Current
IT = 100mA, Gate Open
TC = 25 °C
20 mA
Rth(j-c) Thermal Impedance
Junction to case
Rth(j-a) Thermal Impedance
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Notes :
Junction to Ambient
1. Pulse Width 1.0 ms , Duty cycle 1%
2. RGK Current not Included in measurement.
─ ─ 3.12 °C/W
─ ─ 89 °C/W
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SCR6C60 Даташит, Описание, Даташиты
Fig 1. Gate Characteristics
101
VGM(5V)
P (5W)
GM
100
25oC
PG(AV)(0.5W)
10-1
10-1
V (0.2V)
GD
100 101 102
Gate Current [mA]
103
Fig 3. Typical Forward Voltage
100
104
10 125oC
25 oC
www.DataSheet4U.1c0.o5 m 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage [V]
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
SCR6C60
Fig 2. Maximum Case Temperature
140
120
θ = 180o
100
80 π 2π
θ
360°
60
θ : Conduction Angl e
40
0123
Average On-State Current [A]
4
Fig 4. Thermal Response
101
100
10-1
10-2
10-5 10-4 10-3 10-2 10-1 100 101
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
11
0.1
-50
0 50 100
Junction Temperature[oC]
150
0.1
-50
0 50 100
Junction Temperature[oC]
150
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Номер в каталогеОписаниеПроизводители
SCR6C60Silicon Controlled RectifiersSemiWell Semiconductor
SemiWell Semiconductor

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