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WTM669A PDF даташит

Спецификация WTM669A изготовлена ​​​​«Weitron Technology» и имеет функцию, называемую «EPITAXIAL PLANAR TRANSISTOR».

Детали детали

Номер произв WTM669A
Описание EPITAXIAL PLANAR TRANSISTOR
Производители Weitron Technology
логотип Weitron Technology логотип 

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WTM669A Даташит, Описание, Даташиты
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
wDwewv.DiacteaSMheeatr4Uk.icnomg
WTM669A=669A
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Tstg
WTM669A
SOT-89
1
1. BASE
2. COLLECTOR
2
3
3. EMITTER
Limits
180
160
5
1.5
3
1
150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=1mA, IE=0
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
Emitter-Base Breakdown Voltage
IE=1mA, IC=0
Collector Cutoff Current
VCB=160V, IE=0
Symbol
Min Typ Max Unit
BVCBO
180
-
-V
BVCEO
160
-
-V
BVEBO
5
-
-V
ICBO - - 10 µA
WEITRON
http://www.weitron.com.tw
1/4
01-Aug-05









No Preview Available !

WTM669A Даташит, Описание, Даташиты
WTM669A
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic
Symbol Min
Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
VCE=5V, IC=150mA
VCE=5V, IC=500mA
Collector-Emitter Saturation Voltage
IC=600mA, IB=50mA
Base-Emitter Saturation Voltage
VCE=5V, IC=150mA
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
hFE1
hFE2
VCE(sat)
60
30
-
VBE(on)
-
-
-
200
-
-
- 1V
- 1.5 V
DYNAMIC CHARACTERISTICS
Transition Frequency
wwwV.DCaEta=S5hVee,t4ICU=.co1m0mA, f=100MHz
Output Capacitance
VCB=10V, f=1MHz
fT - 140 - MHz
Cob - 14 - pF
CLASSIFICATION OF hFE1
Rank
hFE1
B
60-120
WEITRON
http://www.weitron.com.tw
2/4
C
100-200
01-Aug-05









No Preview Available !

WTM669A Даташит, Описание, Даташиты
WTM669A
ELECTRICAL CHARACTERISTIC CURVES
350
VCE = -5V
300 Ta=75˚C
250
25˚C
200
150 -25˚C
100
50
0
-1 -10 -100 -1000
Collector current IC (mA)
Fig.1 Current Gain & Collector Current
-1.2
lC=101B
-1.0
-0.8
-0.6
Ta=-75˚C
-0.4
-0.2 -25˚C
25˚C
0
-1 -10 -100 -1000
Collector current IC (mA)
Fig.2 Satueation Voltage & Collector Current
1.2
lC=101B
1.0
0.8
TC=-25˚C
0.6
75˚C 25˚C
0.4
0.2
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Fig.3 Satueation Voltage & Collector Current
200 f = 1 MHz
100 IE = 0
50
20
10
5
2
-1 -3 -10 -30 -100
Collector to base voltage VCB (V)
Fig.5 Capacitance & Collector to Base Voltage
240
VCE=5V
200 Ta=-25˚C
160
120
80
40
0
10 30
100 300 1000
Collector current IC (mA)
Fig.4 Gain Bandwidth Product
& Collector Current
-3
ICmax
-1.0
-0.3
(-13.3V, -1.5A)
(-40V, -0.5A)
-0.1 DC Operation (TC=25˚C)
-0.03
(-160V, -0.02A)
-0.01
-1 -3 -10 -30 -100 -300
Collector to emitter voltage VCE (V)
Fig.6 Safe Operating Area
WEITRON
http://www.weitron.com.tw
3/4
01-Aug-05










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Номер в каталогеОписаниеПроизводители
WTM669AEPITAXIAL PLANAR TRANSISTORWeitron Technology
Weitron Technology

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