C5352 PDF даташит
Спецификация C5352 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5352». |
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Детали детали
Номер произв | C5352 |
Описание | NPN Transistor - 2SC5352 |
Производители | Toshiba Semiconductor |
логотип |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
2SC5352
Unit: mm
• Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max)
(IC = 4 A)
• High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
400
7
10
15
5
80
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
www.DataSheet4U.cifotmhe operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
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Electrical Characteristics (Tc = 25°C)
2SC5352
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 480 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 A
IC = 4 A, IB = 0.5 A
IC = 4 A, IB = 0.5 A
Min Typ. Max Unit
― ― 100 μA
――
1 mA
600 ―
―
V
400 ―
―
V
20 ― ―
― ― 1.0 V
― ― 1.3 V
Rise time
Switching time Storage time
Fall time
tr
VCC ≈ 200 V
― ― 0.5
20 μs
IC
tstg
Input IB1
Output
―
― 2.0 μs
IB2
tf ― ― 0.3
IB1 = 0.5 A, IB2 = −1 A, duty cycle ≤ 1%
Marking
C5352
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Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-10
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IC – VCE
10
1.2
1.0 Common emitter
0.8 Tc = 25°C
8
0.6
6 0.4
4 0.2
0.1
2
IB = 0.05 A
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5352
IC – VBE
20
Common emitter
VCE = 5 V
16
12
8
Tc = 100°C
4 25
−55
0
0 0.5 1
Base-emitter voltage VBE (V)
1.5
100
50
Tc = 100°C
30
25
−55
10
5
3
hFE – IC
Common emitter
VCE = 5 V
1
0.1
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0.3 0.5 1
3 5 10
Collector current IC (A)
30
VBE (sat) – IC
10
Common emitter
IC/IB = 8
5
3
−55
1
0.5
Tc = 100°C
25
0.3
0.1
0.1
0.3 0.5 1
35
Collector current IC (A)
10
VCE (sat) – IC
10
Common emitter
IC/IB = 8
5
3
1
0.5
0.3
0.1
0.1
−55
25
0.3 0.5
Tc = 100°C
1 35
Collector current IC (A)
10
Safe Operating Area
30
IC max (pulsed)*
10
IC max
(continuous)
10 μs*
100 μs*
3 100 ms*
1 ms*
1
DC operation
0.3
Tc = 25°C
10 ms*
0.1
0.03
0.01
1
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
3 10 30
VCEO max
100 300
Collector-emitter voltage VCE (V)
1000
3 2006-11-10
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C5354 | NPN Transistor - 2SC5354 | Toshiba Semiconductor |
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