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PDF HMC382LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC382LP3 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.1005
5
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Functional Diagram
www.DataSheet4U.com
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 1.0 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
General Description
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 1.0 dB noise figure,
17 dB gain and +30 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are
13 dB typical and the LNA requires no external mat-
ching components. The HMC382LP3 & HMC382LP3E
share the same package and pinout with the
HMC376LP3 0.7 - 1.0 GHz LNA. The HMC382LP3 &
HMC382LP3E feature an externally adjustable supply
current which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 130
Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Parameter
Frequency Range
Gain
Min. Typ. Max.
1.7 - 1.9
14 17
Min. Typ. Max.
1.9 - 2.0
12 15
Min. Typ. Max.
2.0 - 2.1
11 14
Min. Typ. Max.
2.1 - 2.2
9 12
Units
GHz
dB
Gain Variation Over Temperature
0.01 0.015
0.01 0.015
0.01 0.015
0.01 0.015 dB/°C
Noise Figure
1.0 1.3
Input Return Loss
13
Output Return Loss
10
Reverse Isolation
37
Output Power for
1dB Compression (P1dB)
16
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
29.5
Supply Current (Idd1 + Idd2)
67
* Rbias resistor value sets current. See application circuit herein.
1.05
12
13
36
1.35
16
30
67
1.15 1.45
11
12
35
15.5
30
67
1.2 1.5
10
9
35
dB
dB
dB
dB
14 dBm
29.5
67
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.1005
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
Pin Descriptions
Pin Number
Function
1, 4, 5, 7, 9,
12, 14, 16
N/C
Description
No connection necessary. These pins may be connected to
RF/DC ground. Performance will not be affected.
Interface Schematic
2
RFIN
This pin is AC coupled and matched to 50 Ohms.
3, 6, 10
GND
These pins and package bottom must
be connected to RF/DC ground.
This pin is used to set the DC current of the amplifier
8 Res
by selection of external bias resistor.
See application circuit.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Application Circuit
www.DataSheet4U.com
5 - 134
Note: L1, L2 and C1 should be located as close to pins as possible.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC382LP3.PDF ] | |
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| HMC382LP3 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | Hittite Microwave Corporation |
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