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HMC382LP3E PDF даташит

Спецификация HMC382LP3E изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «GaAs PHEMT MMIC LOW NOISE AMPLIFIER».

Детали детали

Номер произв HMC382LP3E
Описание GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC382LP3E Даташит, Описание, Даташиты
v00.1005
5
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Functional Diagram
www.DataSheet4U.com
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 1.0 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
General Description
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 1.0 dB noise figure,
17 dB gain and +30 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are
13 dB typical and the LNA requires no external mat-
ching components. The HMC382LP3 & HMC382LP3E
share the same package and pinout with the
HMC376LP3 0.7 - 1.0 GHz LNA. The HMC382LP3 &
HMC382LP3E feature an externally adjustable supply
current which allows the designer to tailor the linearity
performance of the LNA for each application.
5 - 130
Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Parameter
Frequency Range
Gain
Min. Typ. Max.
1.7 - 1.9
14 17
Min. Typ. Max.
1.9 - 2.0
12 15
Min. Typ. Max.
2.0 - 2.1
11 14
Min. Typ. Max.
2.1 - 2.2
9 12
Units
GHz
dB
Gain Variation Over Temperature
0.01 0.015
0.01 0.015
0.01 0.015
0.01 0.015 dB/°C
Noise Figure
1.0 1.3
Input Return Loss
13
Output Return Loss
10
Reverse Isolation
37
Output Power for
1dB Compression (P1dB)
16
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
29.5
Supply Current (Idd1 + Idd2)
67
* Rbias resistor value sets current. See application circuit herein.
1.05
12
13
36
1.35
16
30
67
1.15 1.45
11
12
35
15.5
30
67
1.2 1.5
10
9
35
dB
dB
dB
dB
14 dBm
29.5
67
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com









No Preview Available !

HMC382LP3E Даташит, Описание, Даташиты
v00.1005
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
25
20
15
10 S21
S11
5 S22
0
-5
-10
-15
-20
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
FREQUENCY (GHz)
Gain vs. Temperature
24
22
20
18
16
14
12 +25 C
+85 C
10 -40 C
8
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
5
Input Return Loss vs. Temperature
0
+25 C
-5 +85 C
-40 C
-10
-15
-20
www.DataSheet4U1..6com 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
+25 C
+85 C
-40 C
-10
-15
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-15
-20
-25
+25 C
+85 C
-30 -40 C
-35
-40
-45
-50
1.6 1.7 1.8 1.9 2 2.1 2.2
FREQUENCY (GHz)
2.3
Noise Figure vs. Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6 +25 C
+85 C
0.4 -40 C
0.2
0
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 131









No Preview Available !

HMC382LP3E Даташит, Описание, Даташиты
v00.1005
HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
P1dB vs. Temperature @ Idd = 67 mA
20
19
18
17
16
15
14
13
12
11
10
1.7
+25 C
+85 C
-40 C
1.8 1.9 2 2.1
FREQUENCY (GHz)
2.2
Psat vs. Temperature @ Idd = 67 mA
20
19
18
17
16
15
14
13
12
11
10
1.7
+25 C
+85 C
-40 C
1.8 1.9 2 2.1
FREQUENCY (GHz)
2.2
Output IP3 vs. Temperature Idd = @ 67 mA
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
www.DataSheet4U1..7com
1.8
+25 C
+85 C
-40 C
1.9 2
FREQUENCY (GHz)
2.1
2.2
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
24
22 Noise figure
20
18
16
14 GAIN
P1dB
12
60 70 80 90 100 110
SUPPLY CURRENT (mA)
1.4
1.2
1
0.8
0.6
0.4
0.2
120
5 - 132
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFin)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+10 dBm
150 °C
0.451 W
144 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
67.2
67.4
67.6
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA)
Rbias (Ohms)
60 27
70 16
80 13
100 8.2
120 3.9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com










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Номер в каталогеОписаниеПроизводители
HMC382LP3GaAs PHEMT MMIC LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC382LP3EGaAs PHEMT MMIC LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation

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