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PDF S-8211E Data sheet ( Hoja de datos )
| Número de pieza | S-8211E | |
| Descripción | BATTERY PROTECTION IC | |
| Fabricantes | Seiko | |
| Logotipo |  |
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S-8211E Series
www.sii-ic.com
© Seiko Instruments Inc., 2009-2015
BATTERY PROTECTION IC
FOR 1-CELL PACK
Rev.2.4_00
The S-8211E Series has high-accuracy voltage detections circuit and delay circuits.
The S-8211E Series is suitable for monitoring overcharge and overdischarge of 1-cell lithium ion / lithium polymer
rechargeable battery pack.
Features
(1) High-accuracy voltage detection circuit
• Overcharge detection voltage
3.6 V to 4.5 V (5 mV step)
Accuracy ±25 mV (+25°C)
• Overcharge release voltage
3.5 V to 4.4 V*1
Accuracy ±30 mV (−5°C to +55°C)
Accuracy ±50 mV
• Overdischarge detection voltage
• Overdischarge release voltage
2.0 V to 3.0 V (10 mV step)
2.0 V to 3.4 V*2
Accuracy ±50 mV
Accuracy ±100 mV
(2) Detection delay times are generated by an internal circuit
(external capacitors are unnecessary)
Accuracy ±20%
(3) Wide operating temperature range
−40°C to +85°C
(4) Low current consumption
• During operation
3.0 μA typ., 5.5 μA max. (+25°C)
• During overdischarge
2.0 μA typ., 3.5 μA max. (+25°C)
(5) Output logic of CO pin is selectable.
(6) Lead-free, Sn 100%, halogen-free*3
Active “H”, Active “L”
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
*3. Refer to “ Product Name Structure” for details.
Applications
• Lithium-ion rechargeable battery pack
• Lithium-polymer rechargeable battery pack
Packages
• SOT-23-5
• SNT-6A
Seiko Instruments Inc.
1
1 page  
Rev.2.4_00
Pin Configurations
1. SOT-23-5
SOT-23-5
Top view
54
12 3
Figure 2
2. SNT-6A
SNT-6A
Top view
16
25
34
Figure 3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Pin No.
1
2
3
4
Symbol
VM
VDD
VSS
DO
5 CO
Table 5
Description
Negative power supply input pin for CO pin
Input pin for positive power supply
Input pin for negative power supply
Output pin for overdischarge detection
(CMOS output)
Output pin for overcharge detection
(CMOS output)
Table 6
Pin No. Symbol
1 NC*1
No connection
Description
2 CO
Output pin for overcharge detection
(CMOS output)
3 DO
Output pin for overdischarge detection
(CMOS output)
4 VSS
Input pin for negative power supply
5 VDD
Input pin for positive power supply
6 VM
Negative power supply input pin for CO pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD pin or VSS pin.
Seiko Instruments Inc.
5
5 Page 
Rev.2.4_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
5. CO Pin Resistance “H”
(Test Condition 4, Test Circuit 3)
5. 1 CO pin output logic = Active “H”
The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 =
0 V, V3 = 4.0 V.
5. 2 CO pin output logic = Active “L”
The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V3 = 3.0 V.
6. CO Pin Resistance “L”
(Test Condition 4, Test Circuit 3)
6. 1 CO pin output logic = Active “H”
The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V3 = 0.5 V.
6. 2 CO pin output logic = Active “L”
The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 =
0 V, V3 = 0.5 V.
7. DO Pin Resistance “H”
(Test Condition 5, Test Circuit 3)
The DO pin “H” resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V4 = 3.0 V.
8. DO Pin Resistance “L”
(Test Condition 5, Test Circuit 3)
The DO pin “L” resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 =
0 V, V4 = 0.5 V.
9. Overcharge Detection Delay Time
(Test Condition 6, Test Circuit 4)
9. 1 CO pin output logic = Active “H”
The overcharge detection delay time (tCU) is the time needed for VCO to change from “L” to “H” just after the
voltage V1 momentarily increases (within 10 μs) from overcharge detection voltage (VCU) −0.2 V to overcharge
detection voltage (VCU) +0.2 V under the set conditions of V2 = 0 V.
9. 2 CO pin output logic = Active “L”
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the
voltage V1 momentarily increases (within 10 μs) from overcharge detection voltage (VCU) −0.2 V to overcharge
detection voltage (VCU) +0.2 V under the set conditions of V2 = 0 V.
10. Overdischarge Detection Delay Time
(Test Condition 6, Test Circuit 4)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage
V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (VDL) +0.2 V to overdischarge
detection voltage (VDL) −0.2 V under the set condition of V2 = 0 V.
Seiko Instruments Inc.
11
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